Petri I. Räisänen

Finnish Meteorological Institute — Finland

Engineering · Physical Sciences

7h-index1.1kcitations21works0.02yr avg
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Research Topics

Semiconductor materials and devices(10), Electronic and Structural Properties of Oxides(6), Ferroelectric and Negative Capacitance Devices(6), Catalytic Processes in Materials Science(3), Sustainability in Higher Education(2)

Publications21 total

Lessons learned from developing the transdisciplinary master’s-level course "Living with changing climate”
2026Open Access
Supplementary material to "Lessons learned from developing the transdisciplinary master’s-level course "Living with changing climate”"
2026
Data and code for the manuscript "Future snow scenarios for Northern Europe based on Coupled Model Intercomparison Project Phase 6 data" by Petri Räisänen et al.
METIS·2025Open Access
Data and code for the manuscript "Future snow scenarios for Northern Europe based on Coupled Model Intercomparison Project Phase 6 data" by Petri Räisänen et al.
METIS·2025Open Access
Data and code for the manuscript "Future snow scenarios for Northern Europe based on Coupled Model Intercomparison Project Phase 6 data" by Petri Räisänen et al.
METIS·2024Open Access
Data and code for the manuscript "Mapping the dependence of BC radiative forcing on emission region and season" by Petri Räisänen et al. (submitted to ACP)
METIS·2022Open Access
Data and code for the manuscript "Mapping the dependence of BC radiative forcing on emission region and season" by Petri Räisänen et al. (submitted to ACP)
METIS·2022Open Access
Data and code for the manuscript "Mapping the dependence of BC radiative forcing on emission region and season" by Petri Räisänen et al. (submitted to ACP)
METIS·2022Open Access
Merikanto et al: How Asian aerosols impact regional surface temperatures across the globe, submitted to ACP; NorESM1 and ECHAM6.1 data
METIS·2020Open Access
Merikanto et al: How Asian aerosols impact regional surface temperatures across the globe, submitted to ACP; NorESM1 and ECHAM6.1 data
METIS·2020Open Access
Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices
Scientific Reports·2018· 42 citedOpen Access
Ozone Based Atomic Layer Deposition of Hafnium Oxide and Impact of Nitrogen Oxide Species
Journal of The Electrochemical Society·2011· 17 cited
New Mechanisms for Ozone-Based ALD Growth of High-k Dielectrics via Nitrogen-Oxygen Species
ECS Transactions·2010· 6 cited
New Mechanisms for Ozone-Based ALD Growth of High-k Dielectrics via Nitrogen-Oxygen Species
ECS Meeting Abstracts·2010Open Access
Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition
Journal of Applied Physics·2003· 181 cited
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
Journal of Applied Physics·2002· 278 cited
Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
Applied Physics Letters·2002· 102 cited
Atomic layer deposition of Al2O3 films using AlCl3 and Al(OiPr)3 as precursors
Journal of Materials Chemistry·2002· 33 cited
Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources
Science·2000· 483 cited
Atomic layer deposition of metal oxide films by using metal alkoxides as an oxygen source
2000
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Frequent Co-authors

Michael Givens(4), Joonas Merikanto(4), Mikko Ritala(3), Markku Leskelä(3), M.-Y. Ho(3), B. Busch(3), G. D. Wilk(3), Annelies Delabie(3), Johan Swerts(3), Sven Van Elshocht(3), Sung‐hoon Jung(3), Eric Shero(3), Jan Willem Maes(3), Anna Luomaranta(3), Kaupo Kukli(2), Antti Rahtu(2), David A. Muller(2), M. Bude(2), Hao Gong(2), M. L. Green(2)