A. G. Vasiliev

Engineering · Physical Sciences

4h-index30citations20works0.02yr avg
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Research Topics

Semiconductor materials and devices(11), Semiconductor materials and interfaces(11), Metal and Thin Film Mechanics(5), Intermetallics and Advanced Alloy Properties(4), Copper Interconnects and Reliability(4)

Publications20 total

Phase formation in Ti (Ta)-Ni and Co-Ti films deposited on (00l)Si in a N2 ambient
2018
CoSi 2 /TiO 2 /SiO 2 /Si gate structure formation
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2009
Hf-based barrier layers for Cu-metallization
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2009· 4 cited
<title>Formation of thin ZrO2 layers for nanotransistor gate structures by electron beam evaporation</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 1 cited
<title>Modeling of vertical transistor with electrically variable junctions in ISE TCAD</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008
<title>Silicide/high-k dielectric structures for nanotransistor gates</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006
<title>Simulation of the vertical MOSFET with electrically variable source-drain junctions</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006· 1 cited
<title>Phases transformation in Ti(Ta)-Ni(Co)-Si-N systems</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2004
Phase Formation in Ti–Co–N/CoSi x /Si(100) and Ti–Co–Si–N/CoSi x /Si(100) Systems by Diffusion Reactions: The Role of Nitrogen
Russian Microelectronics·2004
Evolution of the Co–N/Ti/Si System in Magnetron Sputtering of Co onto a Heated Ti/Si(100) Substrate
Russian Microelectronics·2004
Phase Formation in a Ta–Ni–N Thin Film during Its Electron-Beam Evaporation Deposition on a Heated Si(100) Substrate
Russian Microelectronics·2003· 1 cited
Phase Formation in Ti (Ta)-Ni and Co-Ti Films Deposited on (001)Si in N<sub>2</sub> Atmospheres.
MRS Proceedings·2002
Phase Formation during the Surface-Diffusion Growth of Ti–Co–Si–N and Ti–Co–N Thin Films on Si and SiO2
Russian Microelectronics·2001· 6 cited
Contact TiSi2and Barrier TiN Layers for ULSI Multilevel Metallization
Russian Microelectronics·2001· 1 cited
Deposition of thin TiN films by low-power reactive magnetron sputtering
European Workshop Materials for Advanced Metallization,·1997
Investigation of thermal stability of multilayered Si/TiSi2Al and Si/TiSi2(TiN)WAl systems
Vacuum·1993· 2 cited
Structure and properties of TiSi2 thin films and TiSi2-Si(111) interfaces
Surface and Coatings Technology·1991· 2 cited
Structure and properties of TiSi2 films on Si, obtained by Ti and Si co-evaporation in high vacuum
Vacuum·1991· 5 cited
Angular dependence of sputtering yield of TiSi <sub>2</sub> layers and analysis of titanium disilicide by SIMS and SCANIIR methods
Surface and Interface Analysis·1989· 1 cited
InSb Optical and Electrical Property Changes Induced by Multi-Pulsed TEA CO2-Laser Irradiation
Springer series in chemical physics·1984· 6 cited

Frequent Co-authors

A. A. Orlikovsky(17), I. A. Horin(10), A. L. Vasiliev(9), A. E. Rogozhin(6), R. A. Zakharov(4), K. A. Valiev(4), I. A. Khorin(4), N.A. Kiselev(3), M. Eindou(3), V. V. Rodatis(2), V. I. Rudakov(2), A.E. Sedelnikov(2), O.I. Lebedev(2), D.G. Drozdov(2), Mark Aindow(2), A. V. Lobintsov(1), A. A. Orlikovskii(1), В. И. Конов(1), A. B. Korshunov(1), V. N. Tokarev(1)