A. A. Orlikovskii

Russian Academy of Sciences — Russia

Engineering · Physical Sciences

5h-index44citations20works0.02yr avg
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Research Topics

Semiconductor materials and devices(5), Advancements in Semiconductor Devices and Circuit Design(3), Plasma Diagnostics and Applications(3), Metal and Thin Film Mechanics(2), Advanced Surface Polishing Techniques(2)

Publications20 total

Anisotropic trench etching of silicon with high aspect ratio and aperture of 30–50 nm in a two-stage plasma-chemical cyclic process
Russian Microelectronics·2015· 2 cited
Optimization of the tomographic algorithm of the reconstruction of plasma irregularities in process reactors of microelectronics
Russian Microelectronics·2011· 5 cited
Academician Kamil’ Akhmetovich Valiev 55 years in science
Russian Microelectronics·2011
Measurements of linear dimensions of silicon nanorelief elements with a near-rectangular profile by defocusing the electron probe of a scanning electron microscope
Russian Microelectronics·2010· 4 cited
Electrophysical characteristics of HfO2 gate structures formed by electron-beam evaporation
Russian Microelectronics·2009· 2 cited
Emission tomography of plasma in technological reactors of microelectronics
Russian Microelectronics·2009· 5 cited
In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospects, Part IV
Russian Microelectronics·2001· 3 cited
Phase Formation during the Surface-Diffusion Growth of Ti–Co–Si–N and Ti–Co–N Thin Films on Si and SiO2
Russian Microelectronics·2001· 6 cited
In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospect, Part III
Russian Microelectronics·2001· 6 cited
In situ Diagnostics of Plasma Processes in Microelectronics: The Current Status and Prospects. Part II
Russian Microelectronics·2001
A Microwave High-Density Plasma Source for Submicron Silicon IC Technology
Russian Microelectronics·2001· 1 cited
In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospects. Part I.
Russian Microelectronics·2001· 8 cited
In memory of Matvei I. Elinson (1918-2000)
Russian Microelectronics·2000
Implantation of low-energy boron ions into silicon from a low-temperature high-density Ar + BF3 plasma
Russian Microelectronics·2000· 2 cited
On the DLTS Analysis of Deep Trap Profiles in Semiconductors
physica status solidi (a)·1993
Modeling of heterojunction bipolar transistors
1988
Titanium disilicide films for the metallization of the connections of VLSI circuits
1987
Mathematical modeling of the characteristics of bipolar heterojunction transistors
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·1986
Noise immunity of storage units in static bipolar circuits of auxiliary memories
1980
Bipolar integrated semiconductor memories
1979

Frequent Co-authors

K. V. Rudenko(6), K. A. Valiev(5), В. Ф. Лукичев(3), R. A. Zakharov(2), А. В. Фадеев(2), Ya. N. Sukhanov(2), А. Г. Васильев(2), Sergey Averkin(2), A. A. Rylov(2), N. G. Butakova(2), A. V. Zubov(2), A. G. Vasiliev(1), V. V. Rodatis(1), A. V. Lobintsov(1), I. A. Horin(1), В. П. Гавриленко(1), E. N. Zhikharev(1), M. A. Danilova(1), V. A. Kal’nov(1), Yu. V. Larionov(1)