Hidehiro Asai

National Institute of Advanced Industrial Science and Technology — Japan

Engineering · Physical Sciences

15h-index845citations172works1.22yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(63), Advancements in Semiconductor Devices and Circuit Design(53), Physics of Superconductivity and Magnetism(45), Semiconductor Quantum Structures and Devices(29), Quantum and electron transport phenomena(25)

Publications172 total

A Proposal to Utilize V<sub>PG</sub>-V<sub>BG</sub> Mapping toward Optimizing Gate Voltages in Silicon Fin-Type Quantum Dot Devices
2025
Design of oxide-based tunnel FETs using amorphous IGZO and p-type oxide semiconductors
Journal of Applied Physics·2025· 1 citedOpen Access
Effect of interface trap charge on Coulomb oscillation in MOS-type quantum dots
Japanese Journal of Applied Physics·2025Open Access
Hot Carrier Degradation in Si n-MOSFETs at Cryogenic Temperatures
IEEE Journal of the Electron Devices Society·2025· 2 citedOpen Access
Origin of Long-Period Electrical Instability in Silicon Fin-Type Quantum Dots
2024
Neural-network-based prediction of cryogenic BSIM4 model parameters from small datasets
Japanese Journal of Applied Physics·2024· 1 citedOpen Access
Influence of gate work function variations on characteristics of fin-shaped silicon quantum dot device with multi-gate under existence of gate electrostatic coupling
Solid-State Electronics·2024Open Access
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs
2024
Neural Network Prediction of Cryogenic BSIM4 Model Parameters Utilizing a Small Experimental Data Set
2024· 1 cited
Effect of Interface Trap Charge on Coulomb Oscillation in MOS-type Quantum Dots
2024
Large-Scale Characterization Classifying Double Quantum Dots in Isoelectronic-Trap-Assisted Tunnel Field-Effect Transistors
2024
TCAD analysis of conditions for DIBL parameter misestimation in cryogenic MOSFETs
Japanese Journal of Applied Physics·2024· 3 citedOpen Access
Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets
Applied Physics Express·2024· 2 citedOpen Access
Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation
2024
High-pressure hydrogen annealing improving the cryogenic operation of Si (110)-oriented n-MOSFETs
Japanese Journal of Applied Physics·2024· 1 citedOpen Access
Integration of buried nanomagnet and silicon spin qubits in a one-dimensional fin structure
Japanese Journal of Applied Physics·2024Open Access
Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs
IEEE Access·2024· 9 citedOpen Access
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs
2023· 13 cited
Polarized terahertz electromagnetic-wave radiation from cuprate superconductor Bi2212 mesa structures
Japanese Journal of Applied Physics·2023· 4 citedOpen Access
Determining the low-frequency noise source in cryogenic operation of short-channel bulk MOSFETs
2023· 7 cited
page 1 of 9Next →

Frequent Co-authors

Koichi Fukuda(22), Junichi Hattori(17), Takahiro Mori(16), Kazuo Kadowaki(11), Manabu Tsujimoto(10), M. Tachiki(10), Hiroyuki Ota(10), Takanari Kashiwagi(9), Kaveh Delfanazari(9), Richard A. Klemm(9), Tsutomu Ikegami(9), Hiroshi Oka(9), Kimihiko Kato(9), Shota Iizuka(9), Takeo Kitamura(8), Shinji Migita(8), Takashi Yamamoto(7), K. Ishida(7), Hidetoshi Minami(6), Masashi Sawamura(6)