Junichi Hattori

National Institute of Advanced Industrial Science and Technology — Japan

Engineering · Physical Sciences

12h-index492citations149works0.42yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(77), Semiconductor materials and devices(72), Ferroelectric and Negative Capacitance Devices(28), Nanowire Synthesis and Applications(20), Thermal properties of materials(19)

Publications149 total

Impact of a single interface-trapped charge on threshold voltage variation in gate-all-around nanosheet field-effect-transistors analyzed by 3D TCAD simulation
Japanese Journal of Applied Physics·2026
Impact of a Single Interface-Trapped Charge on V<sub>th</sub> Variation in GAA nanosheet FETs Analyzed by 3D TCAD Simulation
2025
Single-Shot Measurement of Electron Density Distribution Under Ultrashort Laser Pulse Irradiation
2025
Requirements for localization length and impurity positions in high-temperature quantum dot operations of isoelectronic-trap-assisted tunnel field-effect transistors
Japanese Journal of Applied Physics·2025Open Access
Effect of interface trap charge on Coulomb oscillation in MOS-type quantum dots
Japanese Journal of Applied Physics·2025Open Access
Effect of Interface Trap Charge on Coulomb Oscillation in MOS-type Quantum Dots
2024
TCAD analysis of conditions for DIBL parameter misestimation in cryogenic MOSFETs
Japanese Journal of Applied Physics·2024· 3 citedOpen Access
Integration of buried nanomagnet and silicon spin qubits in a one-dimensional fin structure
Japanese Journal of Applied Physics·2024Open Access
Effects of Electron Quantum Confinement on Velocity Overshoot in Si Nanosheet Gate-All-Around FETs
IEEE Transactions on Electron Devices·2024· 1 citedOpen Access
Relationship between Electron Velocity Overshoot and Quantum Confinement in Si Nanosheet Gate-All-Around Field-Effect Transistors
2023· 1 cited
Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation
Japanese Journal of Applied Physics·2023· 6 citedOpen Access
Temperature rise effects on static characteristics of complementary FETs with Si and Ge nanosheets
Japanese Journal of Applied Physics·2022· 1 cited
High-speed and low-variability operation of one-dimensional silicon-spin-qubit array employing buried nanomagnets
2022
Temperature Effects on Static Characteristics of Complementary Field-Effect Transistors with Si and Ge Nanosheets
2022
Device Structure and Fabrication Process for MOS Type Silicon Spin Qubit Realizing Process-Variation-Robust two-Qubit SWAP Gate
2022
Anomalous Threshold Voltage Increase due to the Depletion of Extension Edges in Cryogenic MOSFETs
2022
Importance of source and drain extension design in cryogenic MOSFET operation: causes of unexpected threshold voltage increases
Applied Physics Express·2022· 12 citedOpen Access
Cellular automaton approach for carrier degeneracy effects on the electron mobility of high electron mobility transistors
Japanese Journal of Applied Physics·2021
Temperature-dependent mobility modeling of GaN HEMTs by cellular automaton method
2021· 2 cited
Cellular-Automaton Study of Degeneracy Effects on the Mobility of HEMT’s
2021
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Frequent Co-authors

Koichi Fukuda(36), Hidehiro Asai(25), Hiroyuki Ota(17), Tsutomu Ikegami(15), Shinji Migita(14), Takahiro Mori(13), Shigeyasu Uno(9), Akira Toriumi(8), Nobuya Mori(8), Kazuo Nakazato(6), Shota Iizuka(6), Yukinori Morita(5), Takashi Matsukawa(5), Kazuhiko Endo(5), Wataru Mizubayashi(4), Hiroshi Oka(4), Kimihiko Kato(4), Vladimir Poborchii(3), Tatsuro Maeda(3), Hiroshi Fuketa(3)