Yueh Chin Lin

Linkou Chang Gung Memorial Hospital — Taiwan

Engineering · Physical Sciences

12h-index340citations34works0.02yr avg
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Research Topics

Semiconductor materials and devices(25), Advancements in Semiconductor Devices and Circuit Design(12), GaN-based semiconductor devices and materials(7), Semiconductor materials and interfaces(7), Ferroelectric and Negative Capacitance Devices(7)

Publications34 total

The age- and sex-specific association between metabolic body composition and lung function: a cross-sectional study
Endocrine Journal·2025Open Access
Trend of HPV Molecular Epidemiology in the Post-Vaccine Era: A 10-Year Study
Viruses·2023· 12 citedOpen Access
Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications
Journal of Electronic Materials·2023· 12 cited
The Association between High-Sensitivity C-Reactive Protein and Metabolic Syndrome in an Elderly Population Aged 50 and Older in a Community Receiving Primary Health Care in Taiwan
International Journal of Environmental Research and Public Health·2022· 15 citedOpen Access
Study of tri-gate AlGaN/GaN MOS-HEMTs for power application
Micro and Nano Engineering·2020· 9 citedOpen Access
WITHDRAWN: Study of tri-gate AlGaN/GaN MOS-HEMTs for power application
Microelectronic Engineering·2020
Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications
Solid-State Electronics·2019· 10 cited
A Novel Digital Etch Technique for p-GaN Gate HEMT
2018· 9 cited
Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells
Thin Solid Films·2018· 2 cited
In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFET and GAA-FET With Remote-Plasma Treatment
IEEE Electron Device Letters·2018· 22 cited
Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application
Applied Physics Letters·2017· 2 cited
Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO<sub>2</sub>/AlN date dielectric for RF power applications
Japanese Journal of Applied Physics·2017· 4 cited
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
AIP Advances·2017· 6 citedOpen Access
Enhancement-Mode GaN MIS-HEMTs With LaHfO<sub>x</sub>Gate Insulator for Power Application
IEEE Electron Device Letters·2017· 24 cited
Investigation of Mo/Ti/AlN/HfO<sub>2</sub>High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application
IEEE Electron Device Letters·2017· 11 cited
Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer
International Journal of Photoenergy·2017· 11 citedOpen Access
Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In<sub>0.53</sub>Ga<sub>0.47</sub>As
IEEE Transactions on Electron Devices·2016· 4 cited
Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials
IEEE Electron Device Letters·2016· 8 cited
High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
Japanese Journal of Applied Physics·2016· 8 cited
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
IEEE Electron Device Letters·2016· 26 cited
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Frequent Co-authors

Edward Yi Chang(24), Quang Ho Luc(12), Edward Yi Chang(11), Huy‐Binh Do(10), Chenming Hu(8), Sa Hoang Huynh(6), Kuniyuki Kakushima(6), Hiroshi Iwai(6), Hai Dang Trinh(5), Jing Yao(5), Chia Chieh Hsu(4), Jin Hwa Lee(4), Kazuo Tsutsui(4), Parhat Ahmet(4), Hong-Quan Nguyen(3), Tuan Anh Nguyen(3), Yu Sheng Chiu(3), Kuan Ning Huang(3), Chieh Ying Wu(3), Chao Hsin Chien(3)