T. J. Magee

Engineering · Physical Sciences

23h-index1.9kcitations103works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(34), Ion-surface interactions and analysis(22), Semiconductor materials and devices(21), Advanced Surface Polishing Techniques(19), Laser Material Processing Techniques(18)

Publications103 total

Crack Detection and Localization in Thermoelectric Wafersusing Vibroacoustic Excitation
2025Open Access
A MULTI-DISCIPLINARY APPROACH DELIVERS QUALITY RESULTS TO A COMPLEX FORMATION EVALUATION PROBLEM
The APPEA Journal·2005
Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy
Journal of Crystal Growth·2000· 7 cited
Scanning UV Laser Removal of Contaminants from Semiconductor and Optical Surfaces
1991· 3 cited
The effect of subsurface defects on "incipient" (below threshold) laser damage nucleation in fused silica optical flats
1990
Matrix study of material improvement of SOS by DSPEG
Journal of Crystal Growth·1987· 4 cited
IIIB-2 The fabrication submicrometer MOSFET's using laser doping
IEEE Transactions on Electron Devices·1986· 1 cited
FABRICATION SUBMICROMETER MOSFET'S USING LASER DOPING.
IEEE Transactions on Electron Devices·1986
Fabrication of submicrometer MOSFET's using gas immersion laser doping (GILD)
IEEE Electron Device Letters·1986· 48 cited
Fabrication o Submicrometer MOSFET's Usinrz Gas Immersion Laser Doping (GILD) U
1986
Laser doping applied to device fabrication in silicon
Conference on Lasers and Electro-Optics·1986
Summary Abstract: Ion implantation dependence of the defect reduction in silicon on sapphire during double solid phase epitaxial regrowth
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1985· 2 cited
Effects of substrate polishing on double-heterostructure Al<i>y</i>Ga1−<i>y</i>As-Al<i>x</i>Ga1−<i>x</i>As lasers grown by molecular beam expitaxy
Journal of Applied Physics·1985· 4 cited
Summary Abstract: Liquid-phase epitaxial growth of (HgCd)Te on Cd(TeSe) substrates
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1985· 13 cited
Overview of microstructural defect development in interfacial regions of HgCdTe and CdTe layers grown on CdTe and alternate substrates
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1985· 25 cited
Microstructural investigations of refractory metal silicide films on silicon
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1984· 12 cited
Summary Abstract: Growth of high quality (100)CdTe films on (100)GaAs substrates by molecular beam epitaxy
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1984· 12 cited
An Investigation of the Solubility and Diffusivity of Chromium in Gallium Arsenide.
Defense Technical Information Center (DTIC)·1984
Characteristics of the material improvement process for silicon on sapphire by solid phase epitaxial regrowth
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1984· 8 cited
Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy
Applied Physics Letters·1984· 99 cited
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Frequent Co-authors

J. F. Gibbons(17), C. A. Evans(17), R. Ormond(15), Jiahui Peng(12), H. Kawayoshi(10), V. R. Deline(8), J. D. Hong(6), C. Leung(6), D.S. Day(5), B. K. Furman(5), C. Leung(4), T. W. Sigmon(4), C. G. Hopkins(4), G. R. Woolhouse(4), R. J. Blattner(4), A. Gat(3), J. F. Schetzina(3), L. A. Christel(3), Peter Williams(2), R. N. Bicknell(2)