Yasunori Mochizuki

NEC (Japan) — Japan

Engineering · Physical Sciences

18h-index1.2kcitations90works0.02yr avg
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Research Topics

Semiconductor materials and devices(37), Semiconductor Quantum Structures and Devices(23), Integrated Circuits and Semiconductor Failure Analysis(14), Semiconductor materials and interfaces(13), GaN-based semiconductor devices and materials(12)

Publications90 total

Solving Critical Real-World Business Challenges - NEC's Industrial Research Model in the AI Era
2025
Contributors
Elsevier eBooks·2020
Smart city and ICT infrastructure with vehicle to X applications toward urban decarbonization
Elsevier eBooks·2020· 16 cited
AI and IoT for Social Value Creation
2019· 6 cited
Reduced expressions of 4N1K-peptide derived from thrombospondin-2 is associated with malignant aggressiveness and prognosis in bladder cancer
European Urology Supplements·2017
Intelligent multimedia surveillance system for safer cities
APSIPA Transactions on Signal and Information Processing·2016· 9 citedOpen Access
Functional outcomes and patient satisfaction after vascularized osteocutaneous scapula flap reconstruction of the mandible in patients with benign or cancerous tumours
International Journal of Oral and Maxillofacial Surgery·2014· 18 cited
The Supercooling Solidification of Liquid Droplets
Revista Trace·2012
Osteonecrosis of the mandible associated with bisphosphonate therapy: report of a case with surgical intervention
Oral Surgery·2009· 1 cited
Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories
Applied Physics Letters·2006· 33 citedOpen Access
Quantitative identification for the physical origin of variable retention time: A vacancy-oxygen complex defect model
2006· 20 cited
Dual workfunction Ni-silicide/HfSiON gate stacks by phase-controlled full-sificidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices
2005· 57 cited
Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM
The European Physical Journal Applied Physics·2004· 12 cited
Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits
Journal of Applied Physics·2003· 10 citedOpen Access
A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes
2003· 16 cited
Microscopic identification of implantation damage centers in Si ULSIs
2002
Defects related to DRAM leakage current studied by electrically detected magnetic resonance
Physica B Condensed Matter·2001· 8 cited
[A case of breast cancer with bone marrow and liver metastases responding completely to low-dose weekly paclitaxel combined with toremifene].
PubMed·2001
Vascular endothelial growth factor C promotes human gastric carcinoma lymph node metastasis in mice.
PubMed·2001· 49 cited
Charge-trapping defects in Cat-CVD silicon nitride films
Thin Solid Films·2001· 11 cited
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Frequent Co-authors

M. Mizuta(13), T. Umeda(6), Toshiaki Ikoma(5), Akira Usui(4), K. Okonogi(4), S. Fujieda(4), Yukinori Ochiai(3), Heiji Watanabe(3), Chiaki Sasaoka(3), Keisuke Hamada(3), T. Wimbauer(3), Martin S. Brandt(3), M. Stutzmann(3), Yoshishige Matsumoto(3), Norio Ookubo(2), Haruhiko Ono(2), Shinji Matsui(2), Taeko Ikarashi(2), Nobuyuki Ikarashi(2), Atsushi Yamaguchi(2)