A. Shibatomi

Physics and Astronomy · Physical Sciences

17h-index841citations58works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(36), Advancements in Semiconductor Devices and Circuit Design(26), Semiconductor materials and devices(25), GaN-based semiconductor devices and materials(8), Quantum and electron transport phenomena(8)

Publications58 total

LATERALLY COUPLED TRIPLE SELF-ASSEMBLED QUANTUM DOTS
Foundations of Quantum Mechanics in the Light of New Technology·2009
Laterally coupled self-assembled InAs quantum dots embedded in resonant tunnel diode with multigate electrodes
Applied Physics Letters·2008· 35 cited
Modeling and operating characteristics of InGaAs-based resonant-tunneling hot electron transistors (RHETs)
2003· 1 cited
Multichannel single-chip SQUID with a Josephson multiplexer
Superconductor Science and Technology·1991· 5 cited
Transient analysis of resonant tunneling hot electron transistor (RHET)
Solid-State Electronics·1989· 4 cited
A single-chip SQUID having an improved superconducting storage-loop
IEEE Transactions on Electron Devices·1989
Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures
Journal of Applied Physics·1989· 17 cited
Electron transport properties in GaAs/AlGaAs quasi one-dimensional fets
Superlattices and Microstructures·1989· 4 cited
A Single-Chip SQUID
1989
Modeling electron transport in InGaAs-based resonant-tunneling hot-electron transistors
IEEE Transactions on Electron Devices·1989· 10 cited
Resonant-tunneling hot electron transistor (RHET)
Solid-State Electronics·1988· 37 cited
Fabrication Process Of Resonant Tunneling Bipolar Transistor (RBT)
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1987· 1 cited
InAlAs/InGaAs resonant tunneling bipolar transistors (RBTs) operating at room temperature with high current gains
1987· 8 cited
Chapter 4 Ultra-High-Speed HEMT Integrated Circuits
Semiconductors and semimetals·1987· 9 cited
Self-consistent analysis of resonant tunneling current
Applied Physics Letters·1986· 161 cited
InGaAs/InAlGaAs hot-electron transistors with current gain of 15
Electronics Letters·1986· 25 cited
Recent advances inultra-high-speed HEMT technology
IEEE Journal of Quantum Electronics·1986· 32 cited
HEMT technology: Potential and advances
Surface Science·1986· 11 cited
A fully operational 1-kbit HEMT static RAM
IEEE Transactions on Electron Devices·1986· 11 cited
Annealing effect in Si-doped GaAs and AlGaAs layers grown by MBE
Electronics Letters·1986· 8 cited
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Frequent Co-authors

Naoki Yokoyama(18), Masayuki Abe(12), K. Nishiuchi(11), T. Mimura(9), H. Ohnìshì(7), Hidetoshi Onodera(7), Masaaki Kobayashi(7), Shunichi Muto(6), S. Ohkawa(5), T. Futatsugi(5), T. Ohnishi(4), N. Yokoyama(4), K. Imamura(3), T. Shinoki(3), Kuninori Kitahara(3), Takeshi Mimura(3), Y. Nakayama(3), K. Suyama(3), Haruo Shimizu(3), Yasuhiro Yamaguchi(3)