M. A. Poisson

III V Lab — France

Physics and Astronomy · Physical Sciences

9h-index566citations41works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(30), Semiconductor Quantum Structures and Devices(15), Semiconductor materials and devices(12), Ga2O3 and related materials(9), Terahertz technology and applications(7)

Publications41 total

Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain
2014· 5 cited
Electronic transitions and fermi edge singularity in polar heterostructures studied by absorption and emission spectroscopy
Journal of Applied Physics·2012· 7 cited
Amélioration des propriétés de transport dans les transistors HEMT composés de semi-conducteurs borés à larges bande interdite (III-B)-N
HAL (Le Centre pour la Communication Scientifique Directe)·2012
GaN HEMTs on silicon for power devices
2012· 1 cited
AlGaN/GaN based field effect transistors for terahertz detection and imaging
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2012· 1 cited
Manga: Manufacturable GaN
Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)·2011· 3 cited
Sub-terahertz imaging with AlGaN/GaN MISFETs
2010
LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2010· 7 cited
The structure of InAlN/GaN heterostructures for high electron mobility transistors
physica status solidi (a)·2010· 21 cited
Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage
Applied Physics Letters·2010· 84 cited
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
Journal of Applied Physics·2010· 157 citedOpen Access
The structure of InAIN/GaN heterostructures for high electron mobility transistors
HAL (Le Centre pour la Communication Scientifique Directe)·2010
Terahertz imaging using high electron mobility transistors as plasma wave detectors
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 9 cited
Au Free Ohmic Contacts for High Temperature InAlN/GaN HEMT's
ECS Transactions·2009· 5 cited
Au Free Ohmic Contacts for High Temperature InAlN/GaN HEMTs
ECS Meeting Abstracts·2009Open Access
Nitride based nanotransistors as new sources and detectors of THz radiations
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 1 cited
Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 15 cited
KFM analysis of GaN surfaces
HAL (Le Centre pour la Communication Scientifique Directe)·2006
Room-temperature terahertz emission from nanometer field-effect transistors
Applied Physics Letters·2006· 135 cited
Resonant Raman scattering study of Ar<sup>+</sup>ion-implanted AlGaN
Journal of Physics Condensed Matter·2005· 2 cited
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Frequent Co-authors

Christophe Gaquière(11), W. Knap(7), D. Théron(7), S.L. Delage(7), N. Dyakonova(5), E. Morvan(5), B. Boudart(5), F. Teppe(5), A. El Fatimy(4), Y. Guhel(4), D. Coquillat(4), M. Tordjman(4), N. Grandjean(4), K. Madjour(3), A. Cappy(3), N. Sarazin(3), J.C. Pesant(3), P. Dhamelincourt(3), E. Chartier(3), M. Magis(3)