B. G. Svensson

University of Oslo — Norway

Engineering · Physical Sciences

24h-index1.6kcitations63works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(35), Semiconductor materials and devices(26), Semiconductor materials and interfaces(19), ZnO doping and properties(14), Thin-Film Transistor Technologies(14)

Publications59 total

Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
APL Materials·2018· 215 citedOpen Access
Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics
Journal of Applied Physics·2018· 5 citedOpen Access
Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect
Journal of Applied Physics·2017· 25 cited
Electronic properties and morphology of copper oxide/n-type silicon heterostructures
Journal of Physics Condensed Matter·2017· 6 cited
Zn vacancy as a polaronic hole trap in ZnO
Physical review. B./Physical review. B·2017· 80 citedOpen Access
Epitaxial Strain-Induced Growth of CuO at Cu<sub>2</sub>O/ZnO Interfaces
The Journal of Physical Chemistry C·2016· 18 cited
Local vibrational modes of interstitial boron–interstitial oxygen complex in silicon
physica status solidi (a)·2016· 6 citedOpen Access
Zinc-Vacancy–Donor Complex: A Crucial Compensating Acceptor in ZnO
Physical Review Applied·2014· 67 citedOpen Access
Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
Journal of Applied Physics·2014· 66 citedOpen Access
Defect formation and thermal stability of H in high dose H implanted ZnO
Journal of Applied Physics·2013· 24 citedOpen Access
Impurity Sublattice Localization in ZnO Revealed by Li Marker Diffusion
Physical Review Letters·2013· 15 citedOpen Access
Evidence for resonant tunneling from interface states in as-grown n-4H-SiC/SiO 2 capacitors
Thin Solid Films·2013· 4 cited
Electron Paramagnetic Resonance Investigations of Defects in Electron Irradiated ZnO
2013
Defects in Electron Irradiated ZnO : An Electron Paramagnetic Resonance Study
2013
Electronic states at the interface between indium tin oxide and silicon
Journal of Applied Physics·2011· 9 cited
H passivation of Li on Zn-site in ZnO: Positron annihilation spectroscopy and secondary ion mass spectrometry
Physical Review B·2011· 24 citedOpen Access
Reconfigurations and diffusion of trivacancy in silicon
Physica B Condensed Matter·2011· 3 cited
Evaluation of possible mechanisms behind P gettering of iron
Journal of Applied Physics·2011· 36 cited
The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
Applied Physics Letters·2011· 52 citedOpen Access
Vacancy defect and defect cluster energetics in ion-implanted ZnO
Physical Review B·2010· 131 citedOpen Access
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Frequent Co-authors

E. V. Monakhov(14), Andrej Kuznetsov(10), Edouard V. Monakhov(9), Lasse Vines(7), В. П. Маркевич(6), J. L. Lindström(5), K. M. Johansen(5), Anders Hallén(5), А. R. Peaker(5), Л.И. Мурин(5), Filip Tuomisto(4), С. Б. Ластовский(4), J. Coutinho(4), B. S. Avset(4), Giovanni Alfieri(3), M. O. Aboelfotoh(3), J. Slotte(3), M. Mikelsen(3), Tor S. Bjørheim(2), Hussein M. Ayedh(2)