Chih-Hang Tung

Taiwan Semiconductor Manufacturing Company (Taiwan) — Taiwan

Engineering · Physical Sciences

21h-index1.6kcitations55works12.02yr avg
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Research Topics

Semiconductor materials and devices(38), Advancements in Semiconductor Devices and Circuit Design(37), Nanowire Synthesis and Applications(12), Semiconductor materials and interfaces(12), Integrated Circuits and Semiconductor Failure Analysis(9)

Publications55 total

A Study of Low Temperature SoIC Targeting 200 nm Bond Pitch
2024· 12 cited
A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel GaAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
2008· 22 citedOpen Access
Quantum Size Effects on Dielectric Constants and Optical Absorption of Ultrathin Silicon Films
IEEE Electron Device Letters·2008· 27 cited
Equivalent Circuit Model for the Gate Leakage Current in Broken Down $\hbox{HfO}_{2}/\hbox{TaN/TiN}$ Gate Stacks
IEEE Electron Device Letters·2008· 12 cited
Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment
Journal of Applied Physics·2008· 12 cited
Strained n-Channel FinFETs Featuring <i>In Situ</i> Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content
IEEE Transactions on Electron Devices·2008· 36 cited
<i>In Situ</i> Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs
IEEE Electron Device Letters·2008· 40 cited
Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor
Japanese Journal of Applied Physics·2008
In-Situ Surface Passivation and Metal-Gate/High-κDielectric Stack Formation for N-channel Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors
2008· 3 cited
Strained FinFETs with In-situ Doped Si&lt;inf&gt;1-y&lt;/inf&gt;C&lt;inf&gt;y&lt;/inf&gt; Source and Drain Stressors: Performance Boost with Lateral Stressor Encroachment and High Substitutional Carbon Content
Proceedings of the International Power Modulator Symposium and High Voltage Workshop/Proceedings of the ... International Power Modulator Symposium and ... High Voltage Workshop·2008
Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement
Japanese Journal of Applied Physics·2008
A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET
IEEE Electron Device Letters·2008· 17 cited
Strained ${\rm n}$-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance
IEEE Transactions on Electron Devices·2008· 30 cited
Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET
2007
Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon–Carbon Source/Drain Regions
IEEE Transactions on Electron Devices·2007· 24 cited
N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer
IEEE Electron Device Letters·2007· 22 cited
Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors
IEEE Electron Device Letters·2007· 30 cited
Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure
IEEE Electron Device Letters·2007· 31 cited
Beneath-The-Channel Strain-Transfer-Structure (STS) and Embedded Source/Drain Stressors for Strain and Performance Enhancement of Nanoscale MOSFETs
2007· 11 cited
Strained Thin-Body p-MOSFET With Condensed Silicon-Germanium Source/Drain for Enhanced Drive Current Performance
IEEE Electron Device Letters·2007· 14 cited
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Frequent Co-authors

Yee‐Chia Yeo(29), Ganesh S. Samudra(22), N. Balasubramanian(14), Kah‐Wee Ang(12), Tsung-Yang Liow(11), King-Jien Chui(10), Ming Zhu(10), Kian-Ming Tan(8), Rinus T. P. Lee(7), Narayanan Balasubramanian(6), Hock-Chun Chin(6), Guo‐Qiang Lo(6), Zhiqiang Gao(4), Yi Fan(4), Jinming Kong(4), Anyan Du(4), Mingfu Li(4), Ganesh Samudra(4), Kian-Ming Tan(4), Xiantong Chen(3)