Narayanan Balasubramanian

Agency for Science, Technology and Research — Singapore

Engineering · Physical Sciences

14h-index761citations25works0.02yr avg
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Research Topics

Semiconductor materials and devices(10), Advancements in Semiconductor Devices and Circuit Design(9), Nanowire Synthesis and Applications(8), Metal and Thin Film Mechanics(4), Semiconductor Quantum Structures and Devices(3)

Publications25 total

Metallization of Silicon Nanowires and SERS Response from a Single Metallized Nanowire
Chemistry of Materials·2009· 71 cited
CMOS‐Compatible Nanowire Sensor Arrays for Detection of Cellular Bioelectricity
Small·2008· 103 cited
Electrical Detection of Oligonucleotide Using an Aggregate of Gold Nanoparticles as a Conductive Tag
Analytical Chemistry·2008· 52 cited
Polysaccharide Templated Silver Nanowire for Ultrasensitive Electrical Detection of Nucleic Acids
Analytical Chemistry·2008· 40 cited
Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors
IEEE Electron Device Letters·2008· 12 cited
Si Nanowire CMOS Transistors and Circuits by Top-Down Technology Approach
ECS Transactions·2008· 2 cited
Si Nanowire CMOS Transistors and Circuits by Top-Down Technology Approach
ECS Meeting Abstracts·2008Open Access
DNA detection using nanostructured SERS substrates with Rhodamine B as Raman label
Biosensors and Bioelectronics·2008· 131 cited
A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET
IEEE Electron Device Letters·2008· 17 cited
Strained ${\rm n}$-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance
IEEE Transactions on Electron Devices·2008· 30 cited
Real-time monitoring approach: Assessment of effects of antibodies on the adhesion of NCI-H460 cancer cells to the extracellular matrix
Biosensors and Bioelectronics·2007· 22 cited
Hot-Carrier Effects in Strained n-Channel Transistor With Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source/Drain Stressors and Its Orientation Dependence
IEEE Electron Device Letters·2007· 3 cited
Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon–Carbon Source/Drain Regions
IEEE Transactions on Electron Devices·2007· 24 cited
High Speed Selective-Area-Epitaxial Ge-on-SOI PIN Photo-detector Using Thin Low Temperature Si<inf>0.8</inf>Ge<inf>0.2</inf> Buffer by Ultra-High-Vacuum Chemical Vapor Deposition
2007
High Speed Selective-Area-Epitaxial Ge-on-SOI PIN Photo-detector Using Thin Low Temperature Si<sub>0.8</sub>Ge<sub>0.2</sub> Buffer by Ultra-High-Vacuum Chemical Vapor Deposition
2007· 1 cited
Optical NEMS Based Force Sensor Using Silicon Nanophotonics
2007
Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
Nanoscale Research Letters·2007Open Access
Development of dual-etch via tapering process for through-silicon interconnection
Sensors and Actuators A Physical·2007· 41 cited
n-MOSFET With Silicon Carbon Source/Drain for Enhancement of Carrier Transport
IEEE Transactions on Electron Devices·2007· 53 cited
Ultra-Thin-Body P-MOSFET Featuring Silicon-Germanium Source/Drain Stressors With High Germanium Content Formed by Local Condensation
Proceedings of the European Solid State Device Research Conference·2006· 1 cited
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Frequent Co-authors

Yee‐Chia Yeo(9), Ganesh S. Samudra(7), Kah‐Wee Ang(6), Chih-Hang Tung(6), Ajay Agarwal(5), King-Jien Chui(4), Cheng Fang(3), Kavitha D. Buddharaju(3), Anyan Du(3), Tsung-Yang Liow(3), Nizamudin Mohamed Khalid(2), Shaik Mohamed Salim(2), Effendi Widjaja(2), Marc Garland(2), Dim‐Lee Kwong(2), Ming Fu Li(2), Jinming Kong(2), Kian-Ming Tan(2), Weiwei Fang(2), Mingchu Yang(2)