Z. Sh. Yanovitskaya

Ben-Gurion University of the Negev — Israel

Engineering · Physical Sciences

9h-index1.8kcitations35works0.02yr avg
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Research Topics

Semiconductor materials and devices(11), Silicon Nanostructures and Photoluminescence(9), Semiconductor Quantum Structures and Devices(7), Ion-surface interactions and analysis(6), Nanowire Synthesis and Applications(5)

Publications35 total

Numerical simulation of shock wave processes in elastic media and structures. Part II: Application results
Journal of Mining Science·2012· 3 cited
Numerical simulation of shock-wave processes in elastic media and structures. Part I: Solving method and algorithms
Journal of Mining Science·2012· 6 cited
X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources
Semiconductors·2010· 9 cited
Monte Carlo simulation of growth of nanowhiskers
Semiconductors·2010· 2 cited
Simulation of nanochannel membrane formation
Optoelectronics Instrumentation and Data Processing·2009
A Monte Carlo simulation of the processes of nanostructure growth: The time-scale event-scheduling algorithm
Nanotechnologies in Russia·2009· 58 cited
Effect of pressure annealing on formation of light‐emitting Si nanocrystals in Si rich SiO<sub>2</sub>
physica status solidi (a)·2008· 3 cited
Lattice Monte Carlo model of SiO x layers
Nanotechnologies in Russia·2008· 10 cited
SiO x layer formation during plasma sputtering of Si and SiO2 targets
Semiconductors·2008· 13 cited
Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2007· 3 cited
Transformations of porous layers upon high-temperature annealing: Simulation
Russian Microelectronics·2007· 2 cited
Monte Carlo Simulation of Porous Layers Sintering
Key engineering materials·2007· 5 cited
Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO2
AIP conference proceedings·2007
Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition
Semiconductors·2006· 19 cited
Edge-dimer row – The reason of three-bilayer steps and islands stability on Si(111)-7×7
Surface Science·2006· 6 cited
Causes of the stability of three-bilayer islands and steps on a Si (111) surface
Semiconductors·2005· 7 cited
Pore Sealing on Si(001) and Si(111) in Homoepitaxy and Annealing: A Monte Carlo Simulation
Russian Microelectronics·2004· 2 cited
Influence of atom diffusion parameters on Ge nano-island orientation on Si(111) at initial nucleation stage
2004
KINETICS OF ATOMIC SURFACE TRANSFORMATION DURING STRANSKI–KRASTANOW GROWTH MODE
International Journal of Nanoscience·2004· 3 cited
Simulations of diffusion barrier deposition on porous low-k films
Microelectronic Engineering·2003· 12 cited
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Frequent Co-authors

I. G. Neizvestny(14), А. В. Зверев(13), Nataliya L. Shwartz(13), J. Jędrzejewski(5), D. V. Marin(4), Alexander N. Karpov(4), I. Balberg(4), D. V. Brunev(4), S. A. Teys(4), Karen Maex(3), Denis Shamiryan(3), I. V. Antonova(3), M.B. Gulyaev(3), В. А. Володин(3), Y. Goldstein(3), I.A. Reizvikh(3), Natalia L. Shwartz(3), G. A. Kachurin(2), E. Savir(2), И. Г. Неизвестный(2)