S. Marcinkevičius

Nanosc (Sweden) — Sweden

Physics and Astronomy · Physical Sciences

7h-index371citations7works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(7), GaN-based semiconductor devices and materials(3), Semiconductor materials and devices(3), Quantum and electron transport phenomena(2), Quantum Dots Synthesis And Properties(1)

Publications7 total

Photoexcited carrier recombination in wide <i>m</i>-plane InGaN/GaN quantum wells
Applied Physics Letters·2013· 51 cited
Optical properties of extended and localized states in <i>m</i>-plane InGaN quantum wells
Applied Physics Letters·2013· 36 cited
Transient electromagnetically induced transparency in self-assembled quantum dots
Applied Physics Letters·2008· 102 cited
Carrier spin dynamics in modulation-doped InAs∕GaAs quantum dots
Journal of Applied Physics·2006· 16 cited
Carrier dynamics in modulation-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">In</mml:mi><mml:mi mathvariant="normal">As</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">As</mml:mi></mml:mrow></mml:math>quantum dots
Physical Review B·2005· 97 cited
Changes in luminescence intensities and carrier dynamics induced by proton irradiation in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">A</mml:mi><mml:mi mathvariant="normal">s</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">a</mml:mi><mml:mi mathvariant="normal">A</mml:mi><mml:mi mathvariant="normal">s</mml:mi></mml:math>quantum dots
Physical review. B, Condensed matter·2002· 33 cited
Be-doped low-temperature-grown GaAs material for optoelectronic switches
IEE Proceedings - Optoelectronics·2002· 36 cited

Frequent Co-authors

J. Siegert(3), Q. X. Zhao(2), Kathryn M. Kelchner(2), Shuji Nakamura(2), Steven P. DenBaars(2), James S. Speck(2), A. Gushterov(1), J.P. Reithmaier(1), Leah Y. Kuritzky(1), A. Krotkus(1), K. Bertulis(1), J.‐L. Coutaz(1), Agnieszka Wołoś(1), M. Kamińska(1), J.-F. Roux(1), J. Siegert(1), K.P. Korona(1), R. León(1), Bronislovas Čechavičius(1), B. Magness(1)