Bongim Jun

Engineering · Physical Sciences

15h-index692citations23works0.02yr avg
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Research Topics

Semiconductor materials and devices(16), Advancements in Semiconductor Devices and Circuit Design(16), Radiation Effects in Electronics(10), Integrated Circuits and Semiconductor Failure Analysis(7), Radio Frequency Integrated Circuit Design(3)

Publications23 total

Flight photon counting electron multiplying charge coupled device development for the Roman Space Telescope coronagraph instrument
Journal of Astronomical Telescopes Instruments and Systems·2023· 20 citedOpen Access
The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI
IEEE Transactions on Nuclear Science·2007· 19 cited
A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References
IEEE Transactions on Nuclear Science·2007· 17 cited
The Radiation Tolerance of Strained Si/SiGe n-MODFETs
IEEE Transactions on Nuclear Science·2007· 4 cited
A comparison of 63 MeV proton and 10 keV X-ray radiation effects in 4H-SiC depletion-mode vertical trench JFETs
2007· 1 cited
The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary $(npn + pnp)$ SiGe:C HBT Technology
IEEE Transactions on Nuclear Science·2007· 19 cited
Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications
2007· 13 cited
The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs
IEEE Transactions on Nuclear Science·2006· 38 cited
An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs
IEEE Transactions on Nuclear Science·2006· 56 cited
Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices
IEEE Transactions on Nuclear Science·2006· 31 cited
X-Ray Irradiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI
IEEE Transactions on Nuclear Science·2006· 17 cited
The Effects of Proton Irradiation on 90 nm Strained Si CMOS on SOI Devices
2006· 15 cited
CMOS reliability issues for emerging cryogenic Lunar electronics applications
Solid-State Electronics·2006· 41 cited
Investigation of Second-Harmonic Generation for SOI Wafer Metrology
ECS Meeting Abstracts·2006· 3 citedOpen Access
Recent Radiation Issues In Silicon-On-Insulator Devices
ECS Meeting Abstracts·2006· 1 citedOpen Access
A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs
IEEE Transactions on Nuclear Science·2005· 50 cited
Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers
IEEE Transactions on Nuclear Science·2004· 116 cited
Total dose effects on double gate fully depleted SOI MOSFETs
IEEE Transactions on Nuclear Science·2004· 24 cited
Charge trapping in irradiated SOI wafers measured by second harmonic generation
IEEE Transactions on Nuclear Science·2004· 21 cited
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
IEEE Transactions on Nuclear Science·2003· 152 cited
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Frequent Co-authors

John D. Cressler(13), Daniel M. Fleetwood(12), Ronald D. Schrimpf(12), Paul W. Marshall(11), Akil K. Sutton(8), Ryan M. Diestelhorst(8), Cheryl J. Marshall(6), A. P. Gnana Prakash(5), Marco Bellini(5), Gustavo Espinel(4), Aravind Appaswamy(4), Laleh Najafizadeh(3), Dakai Chen(3), Aditya P. Karmarkar(2), Robert A. Weller(2), B. D. White(2), L. J. Brillson(2), Umesh K. Mishra(2), Ray Ladbury(2), Robert A. Reed(2)