Haecheon Kim

Chung-Ang University — South Korea

Engineering · Physical Sciences

11h-index375citations69works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Radio Frequency Integrated Circuit Design(31), GaN-based semiconductor devices and materials(25), Semiconductor materials and devices(25), Microwave Engineering and Waveguides(11), Silicon Carbide Semiconductor Technologies(9)

Publications69 total

Enhanced Thermal Performance of RF Amplifiers via Manifold Microchannel with Porous Structure
2025
Thermal Cross-Talk Analysis in Multi-Finger Gallium Nitride High Electron Mobility Transistors
Applied Science and Convergence Technology·2025Open Access
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Nanomaterials·2020· 14 citedOpen Access
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Nanomaterials·2020· 8 citedOpen Access
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
Journal of the Korean Physical Society·2020
Improvement of Proton Radiation Hardness Using ALD-Deposited Al<sub>2</sub>O<sub>3</sub> Gate Insulator in GaN-Based MIS-HEMTs
ECS Journal of Solid State Science and Technology·2019· 10 cited
Fragmentation-Less FAT-compatible File System for Internet of Things
2018· 1 cited
DC and RF Characteristics of Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess
ECS Journal of Solid State Science and Technology·2018· 3 cited
The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors
Thin Solid Films·2017· 10 cited
ETRI 0.25 μm GaN MMIC Process and X-Band Power Amplifier MMIC
The Journal of Korean Institute of Electromagnetic Engineering and Science·2017Open Access
Hydrazine (N<sub>2</sub>H<sub>4</sub>)-Based Surface Treatment for Interface Quality Improvement in Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMT
ECS Journal of Solid State Science and Technology·2017· 1 cited
埋込みゲートAlGaN/GaN高電子移動度トランジスタの性能に及ぼす水酸化テトラメチルアンモニウム処理の影響【Powered by NICT】
Thin Solid Films·2017
Microwave Low-Noise Performance of $0.17~\mu \text{m}$ Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
IEEE Electron Device Letters·2016· 28 cited
Analysis of micro-architecture resources interference on multicore NUMA systems
2016· 1 cited
ワイドヘッドダブルデッキT字型ゲートを有するSiC上の0.17μmゲート長のAlGaN/GaN HEMTのマイクロ波低ノイズ性能
IEEE Electron Device Letters·2016
Fabrication and electrical properties of an AlGaN/GaN HEMT on SiC with a taper-shaped backside via hole
Journal of the Korean Physical Society·2015· 1 cited
Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment
Thin Solid Films·2013· 11 cited
A Single-Chip 2.5-Gb/s Burst-Mode Optical Receiver With Wide Dynamic Range
IEEE Photonics Technology Letters·2010· 7 cited
Characteristics of a 60 GHz MMIC mixer with an open stub microstrip line
Microwave and Optical Technology Letters·2010· 1 cited
Stability Improvement of 60 GHz Narrowband Amplifier Using Microstrip Coupled Lines
ETRI Journal·2009· 10 citedOpen Access
page 1 of 4Next →

Frequent Co-authors

Ho‐Kyun Ahn(17), Jong‐Won Lim(13), Sang‐Heung Lee(12), Jae‐Kyoung Mun(10), Jae Kyoung Mun(8), Ja‐Yol Lee(7), Byoung‐Gue Min(7), Hong‐Gu Ji(7), Hyun-Kyu Yu(6), Hyung Sup Yoon(6), Hyung‐Ho Park(6), Sung‐Jae Chang(6), Hyun‐Wook Jung(6), Woojin Chang(6), Hyung-Moo Park(4), Seong‐Il Kim(4), Jong‐Lam Lee(4), Jong‐Won Lim(4), Jong‐Lam Lee(3), Dong Min Kang(3)