Hyun‐Wook Jung

Electronics and Telecommunications Research Institute — South Korea

Physics and Astronomy · Physical Sciences

8h-index296citations46works1.62yr avg
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Research Topics

GaN-based semiconductor devices and materials(31), Semiconductor materials and devices(20), Ga2O3 and related materials(18), Semiconductor Quantum Structures and Devices(6), Radio Frequency Integrated Circuit Design(6)

Publications46 total

Demonstration of GaN‐Based HEMTs Using Extremely Thin h‐BN Passivation Layer and Air Spacer for the RF Performance Improvement
Advanced Electronic Materials·2025Open Access
Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs
ETRI Journal·2025· 1 citedOpen Access
Thermal Design and Fabrication of Embedded Liquid Cooling for Gallium Nitride High Electron Mobility Transistor Devices
Applied Science and Convergence Technology·2025Open Access
Thermal Cross-Talk Analysis in Multi-Finger Gallium Nitride High Electron Mobility Transistors
Applied Science and Convergence Technology·2025Open Access
Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs
2024· 1 cited
Investigation of NiSi Contacts on n-Type Gallium Nitride Using Low-Temperature Annealing
Applied Science and Convergence Technology·2024Open Access
Investigation of In Situ NH<sub>3</sub> and N<sub>2</sub>O Plasma Treatment on AlGaN/GaN High Electron Mobility Transistors
Applied Science and Convergence Technology·2024· 3 citedOpen Access
Impact of Gate and Drain Distance on Device Characteristics in InAlGaN/GaN High Electron Mobility Transistors
Applied Science and Convergence Technology·2024· 4 citedOpen Access
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in <i>L</i><sub>G</sub> = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications
ETRI Journal·2024· 5 citedOpen Access
Impact of Parasitic Gate Capacitance on RF Performance in GaN-Based HEMTs for X-Band Applications
ECS Meeting Abstracts·2023
Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application
ECS Meeting Abstracts·2023
Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
Materials Science in Semiconductor Processing·2023· 5 cited
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Nanomaterials·2023· 2 citedOpen Access
Simulation of Injection Molding Process Considering Rheological Properties of Polypropylenes
Polymer Korea·2023· 1 cited
Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
ETRI Journal·2022· 7 citedOpen Access
Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs
Current Applied Physics·2022· 2 cited
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
Crystals·2021· 10 citedOpen Access
Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
ACS Applied Materials & Interfaces·2021· 22 cited
Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs
ECS Meeting Abstracts·2020
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Nanomaterials·2020· 14 citedOpen Access
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Frequent Co-authors

Sung‐Jae Chang(32), Ho‐Kyun Ahn(26), Jong‐Won Lim(19), Ilgyu Choi(14), Byoung‐Gue Min(10), Dong‐Min Kang(10), Seong‐Il Kim(9), Hyung Sup Yoon(9), Jae-Won Do(8), Haecheon Kim(8), Sang‐Heung Lee(8), Y.S. Noh(6), Kyu Jun Cho(6), Dong Min Kang(6), Woojin Chang(5), Soo Cheol Kang(5), Kyujun Cho(4), Dong‐Seok Kim(4), Min Jeong Shin(4), Jong‐Won Lim(4)