Y.S. Noh

Electronics and Telecommunications Research Institute — South Korea

Engineering · Physical Sciences

8h-index295citations44works1.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(35), Advanced Power Amplifier Design(22), GaN-based semiconductor devices and materials(16), Microwave Engineering and Waveguides(15), Semiconductor Quantum Structures and Devices(7)

Publications44 total

Demonstration of GaN‐Based HEMTs Using Extremely Thin h‐BN Passivation Layer and Air Spacer for the RF Performance Improvement
Advanced Electronic Materials·2025Open Access
X-Band Low-Noise Amplifier MMICs Using Wavice’s 0.2 μm GaN HEMT Process
The Transactions of The Korean Institute of Electrical Engineers·2025
Compact X-band 30W Power Amplifier MMIC using 0.2 um GaN HEMT Technology
2025
Development of X-Band Receiver LNA and Switch MMICs using Wavice’s 0.2μm GaN Technology
The Journal of Korean Institute of Electromagnetic Engineering and Science·2025Open Access
X-Band GaN Front-End MMIC for Radar Applications
The Journal of Korean Institute of Electromagnetic Engineering and Science·2025Open Access
X-Band GaN Power Amplifier MMIC Design and Radiation Evaluations for Space Applications
2024· 2 cited
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in <i>L</i><sub>G</sub> = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications
ETRI Journal·2024· 5 citedOpen Access
Impact of Parasitic Gate Capacitance on RF Performance in GaN-Based HEMTs for X-Band Applications
ECS Meeting Abstracts·2023
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Nanomaterials·2023· 2 citedOpen Access
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Nanomaterials·2020· 14 citedOpen Access
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Nanomaterials·2020· 8 citedOpen Access
A compact Doherty power amplifier for massive multi‐input multi‐output applications
Microwave and Optical Technology Letters·2018· 2 cited
A 16 watt X-band GaN high power amplifier MMIC for phased array applications
2016· 7 cited
Design and Fabrication of 25 W Ka-Band SSPA Based on GaN HPA MMICs
The Journal of Korean Institute of Electromagnetic Engineering and Science·2015· 2 citedOpen Access
GaN high power amplifier MMIC for 30W Compact Doherty amplifier for LTE active antenna system
2015· 8 cited
Ka-band GaN power amplifier MMIC chipset for satellite and 5G cellular communications
2015· 26 cited
Receiver and transmitter RFICs for Ku-band mobile satellite communication
2010· 2 cited
A Compact Ku-Band SiGe Power Amplifier MMIC With On-Chip Active Biasing
IEEE Microwave and Wireless Components Letters·2010· 19 cited
Ku-band Up-converter Multi-function MMIC using 0.25 &amp;#x00B5;m SiGe BiCMOS Technology
2009
High Efficient MMIC High Power Amplifier for Ku Band Satellite Communications
Theory and Applications of Satisfiability Testing·2009
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Frequent Co-authors

In‐Bok Yom(17), Jong‐Won Lim(9), Manseok Uhm(6), Sung‐Jae Chang(6), Hyun‐Wook Jung(6), Sang‐Heung Lee(6), Seong‐Il Kim(6), Ho‐Kyun Ahn(6), Dongpil Chang(5), Ilgyu Choi(4), Dong‐Seok Kim(3), Dong‐Min Kang(3), Inkwon Ju(2), K.Y. Kim(2), Tae‐Woo Kim(2), Young-Ho Bae(2), Soo Cheol Kang(2), Haecheon Kim(2), J.H. Kim(2), C.S. Park(2)