Sung‐Jae Chang

Electronics and Telecommunications Research Institute — South Korea

Engineering · Physical Sciences

11h-index400citations91works1.32yr avg
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Research Topics

Semiconductor materials and devices(54), GaN-based semiconductor devices and materials(40), Advancements in Semiconductor Devices and Circuit Design(39), Ga2O3 and related materials(18), Silicon Carbide Semiconductor Technologies(16)

Publications91 total

Optimization of source-connected field plate in AlGaN/GaN HEMTs for high-performance and high-reliability operation: A simulation study
Materials Science in Semiconductor Processing·2026
Demonstration of GaN‐Based HEMTs Using Extremely Thin h‐BN Passivation Layer and Air Spacer for the RF Performance Improvement
Advanced Electronic Materials·2025Open Access
Space radiation effects in GaN-based devices
2025
Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs
ETRI Journal·2025· 1 citedOpen Access
Thermal Design and Fabrication of Embedded Liquid Cooling for Gallium Nitride High Electron Mobility Transistor Devices
Applied Science and Convergence Technology·2025Open Access
Thermal Cross-Talk Analysis in Multi-Finger Gallium Nitride High Electron Mobility Transistors
Applied Science and Convergence Technology·2025Open Access
Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs
2024· 1 cited
Investigation of NiSi Contacts on n-Type Gallium Nitride Using Low-Temperature Annealing
Applied Science and Convergence Technology·2024Open Access
Investigation of In Situ NH<sub>3</sub> and N<sub>2</sub>O Plasma Treatment on AlGaN/GaN High Electron Mobility Transistors
Applied Science and Convergence Technology·2024· 3 citedOpen Access
Impact of Gate and Drain Distance on Device Characteristics in InAlGaN/GaN High Electron Mobility Transistors
Applied Science and Convergence Technology·2024· 4 citedOpen Access
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in <i>L</i><sub>G</sub> = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications
ETRI Journal·2024· 5 citedOpen Access
Impact of Parasitic Gate Capacitance on RF Performance in GaN-Based HEMTs for X-Band Applications
ECS Meeting Abstracts·2023
Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application
ECS Meeting Abstracts·2023
Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
Materials Science in Semiconductor Processing·2023· 5 cited
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Nanomaterials·2023· 2 citedOpen Access
Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
ETRI Journal·2022· 7 citedOpen Access
Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs
Current Applied Physics·2022· 2 cited
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
Crystals·2021· 10 citedOpen Access
Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
ACS Applied Materials & Interfaces·2021· 22 cited
InAlGaN/GaN HEMT 제작 및 특성
2021
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Frequent Co-authors

Hyun‐Wook Jung(22), S. Cristoloveanu(16), Ho‐Kyun Ahn(16), Jong‐Won Lim(15), Jung‐Hee Lee(11), Maryline Bawedin(8), Ilgyu Choi(8), Dong‐Min Kang(7), Byoung‐Gue Min(7), Dong‐Seok Kim(6), Young-Ho Bae(6), Hyung Sup Yoon(6), Haecheon Kim(5), Sang‐Heung Lee(5), Seong‐Il Kim(5), M. Bawedin(5), Hee‐Sung Kang(4), Maruf Bhuiyan(4), Soo Cheol Kang(4), Y.S. Noh(4)