R. Bolam

Essex Westford School District — United States

Engineering · Physical Sciences

14h-index687citations37works3.02yr avg
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Research Topics

Semiconductor materials and devices(32), Advancements in Semiconductor Devices and Circuit Design(27), Integrated Circuits and Semiconductor Failure Analysis(14), Copper Interconnects and Reliability(5), Ferroelectric and Negative Capacitance Devices(4)

Publications37 total

A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction
2024· 3 cited
A process-variation-cognizant efficient MOL and BEOL TDDB evaluation method
2017· 2 cited
Applications of clustering model to bimodal distributions for dielectric breakdown
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2017· 7 cited
Ti and NiPt/Ti liner silicide contacts for advanced technologies
2016· 31 cited
Fundamental statistical properties of reconstruction methodology for TDDB with variability in BEOL/MOL/FEOL applications
2016· 2 cited
New breakdown data generation and analytics methodology to address BEOL and mol dielectric TDDB process development and technology qualification challenges
2014· 33 cited
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
2012· 89 cited
Interconnect processes and reliability for RF technology
2011· 4 cited
A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS
2011· 14 cited
A viable and comprehensive TDDB assessment methodology for investigation of SRAM V<inf>min</inf> failure
2009· 7 cited
High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies
2008· 4 cited
Ring Oscillator Based Test Structure for NBTI Analysis
2007· 36 cited
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
2006· 55 cited
Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates
Microelectronic Engineering·2005· 7 cited
A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies
2005· 3 cited
A low complexity 0.13 μ SiGe BiCMOS technology for wireless and mixed signal applications
2004· 18 cited
Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration
Microelectronics Reliability·2004· 11 cited
Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide
2003· 27 cited
Electrical characteristics and reliability of UV transparent Si/sub 3/n/sub 3/ metal-insulator-metal (MIM) capacitors
IEEE Transactions on Electron Devices·2003· 12 cited
Partially-depleted SOI technology for digital logic
2003· 71 cited
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Frequent Co-authors

G. Shahidi(8), F. Assaderaghi(8), E. Leobandung(8), D. Schepis(8), Ernest Y. Wu(8), A. Ajmera(7), W. Rausch(7), B. Davari(7), L. Wagner(6), B.P. Linder(4), Mukesh Khare(4), D. K. Sadana(4), H.J. Hovel(4), J. H. Stathis(4), D. Coolbaugh(4), D. Badami(3), J.W. Sleight(3), K. Wu(3), A. Strong(3), K. Watson(3)