D. Coolbaugh

University at Albany, State University of New York — United States

Engineering · Physical Sciences

9h-index460citations16works0.02yr avg
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Research Topics

Semiconductor materials and devices(13), Advancements in Semiconductor Devices and Circuit Design(8), Radio Frequency Integrated Circuit Design(5), 3D IC and TSV technologies(4), Ferroelectric and Negative Capacitance Devices(3)

Publications16 total

American Institute for Manufacturing Integrated Photonics (AIM Photonics)
2015· 10 cited
32nm general purpose bulk CMOS technology for high performance applications at low voltage
2008· 56 cited
High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies
2008· 4 cited
A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process
2008· 112 cited
Electrically Programmable Fuses for Analog and Mixed Signal Applications in Silicon Germanium BiCMOS Technologies
Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting·2007· 6 cited
Technology Elements of a Common Platform Bulk Foundry Offering (Invited)
2007· 2 cited
High Quality Passive Devices Fabricated Inexpensively in Advanced RF-CMOS Technologies with Copper BEOL
2007· 2 cited
RF CMOS for microwave and MM-wave applications
2006· 12 cited
Reliability Characterization of BEOL Vertical Natural Capacitor using Copper and Low-k SiCOH Dielectric for 65nm RF and Mixed-Signal Applications
2006· 24 cited
The influence of high resistivity substrates on CMOS latchup robustness
Electrical Overstress/Electrostatic Discharge Symposium·2005· 3 cited
A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies
2005· 3 cited
Product applications and technology directions with SiGe BiCMOS
IEEE Journal of Solid-State Circuits·2003· 45 cited
Advanced passive devices for enhanced integrated RF circuit performance
2003· 39 cited
Electrical characteristics and reliability of UV transparent Si/sub 3/n/sub 3/ metal-insulator-metal (MIM) capacitors
IEEE Transactions on Electron Devices·2003· 12 cited
Electrical Characteristics and Reliability of UV Transparent Si N Metal-Insulator-Metal (MIM) Capacitors
2003· 1 cited
A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect
2002· 129 cited

Frequent Co-authors

V. Ramachandran(7), J. Dunn(6), Zhenyu He(5), E. Eshun(5), Alvin Joseph(4), R. Groves(4), K. Watson(4), R. Bolam(4), D. Ahlgren(3), B. Jagannathan(3), S. Subbanna(3), D.L. Harame(3), An Steegen(3), S. St Onge(3), J. Johnson(2), S. Samavedam(2), K. Stein(2), Chris Hobbs(2), M. Zaleski(2), J. Li(2)