Tomo Ueno

Tokyo University of Agriculture and Technology — Japan

Engineering · Physical Sciences

11h-index434citations110works0.02yr avg
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Research Topics

Semiconductor materials and devices(73), Thin-Film Transistor Technologies(33), Silicon Nanostructures and Photoluminescence(25), Advancements in Semiconductor Devices and Circuit Design(23), Semiconductor materials and interfaces(22)

Publications110 total

Complete absorption of 2.45 GHz microwaves by multiple-conductive-layered system and application in heating technology
IEICE Electronics Express·2024Open Access
Excimer-Laser-Induced Crystallization of Amorphous Silicon Films Deposited at 300°C Using Dehydrogenation by Argon Ion Implantation at 25 and 300°C
2024
Preparation and Evaluation of GeO<sub>2</sub> Film by Two-Step Oxidation
2024
Research on High-Performance Organic Thin-Film Transistors
2024
Heterostructure formation of group-III sesquioxides via cation-exchange reactions with metal chloride gases
AIP Advances·2023Open Access
Research on structural stabilization method of GeO2 film and improvement of electrical characteristics
2022
Effect of high temperature homoepitaxial growth of β-Ga2O3 by hot-wall metalorganic vapor phase epitaxy
Journal of Crystal Growth·2022· 22 cited
Evaluation of PMA-GeO 2 and improvement of characteristics utilizing it
The Japan Society of Applied Physics·2021
Investigation of Low Temperature Oxidation of Si Substrates Using Chemical Solutions
The Japan Society of Applied Physics·2021
Study of Introduction of Post Metallization Annealing at the GeO2/Ge Interface
The Japan Society of Applied Physics·2021
Fabrication of high-performance Ge-MOS structure using Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>stacked gate insulating film
2021
Activation of 300-mm-Diameter-Phosphorus-Implanted Silicon Substrates by Wireless Carbon Heating Tubes
2021
Improvement of GeO<sub>2</sub>/Ge interface characteristics by Hf-Post Metallization Annealing and Hf-Post Metallization Oxidation
2021
verification of annealing effect on organic devices
The Japan Society of Applied Physics·2021
Study of improvement of GeO 2 film quality and GeO 2 /Ge interface state by pure water rinse after PMA
The Japan Society of Applied Physics·2021
Study on improvement of GeO 2 film quality by plasma nitriding
The Japan Society of Applied Physics·2021
Effect of OH group attached to the surface of insulating film on organic thin film transistor and verification of improvement measures
The Japan Society of Applied Physics·2020
Manufacture and evaluation of MOS gate structure by using TiO 2
The Japan Society of Applied Physics·2020
Investigation of conductivity change of organic semiconductor by annealing
The Japan Society of Applied Physics·2020
Study of improvement of GeO 2 /Ge interface state and GeO 2 film quality by Zr-PMA
The Japan Society of Applied Physics·2020
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Frequent Co-authors

Yoshitaka Iwazaki(23), Yusuke Oniki(12), Iwao Ohdomari(10), Koichi Kuroiwa(10), Yasuo Tarui(6), Yoshitaka Nagasato(4), Masahiko Hasumi(4), Hiroshi Kawarada(4), Yasuo Kunii(4), Yoshitaka Iwasaki(3), Junji Senzaki(3), Hideo Koumo(3), Hisashi Fukuda(3), Hiroshi Nagayoshi(3), Kōichi Kamisako(3), Kabuto Hori(3), Osamu Mitsunaga(2), Hirotaka Iino(2), T. Akiyama(2), Wong Chee Hoe(2)