D. Chandler‐Horowitz

National Institute of Standards and Technology — United States

Engineering · Physical Sciences

12h-index906citations55works0.02yr avg
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Research Topics

Thin-Film Transistor Technologies(12), Silicon and Solar Cell Technologies(11), Semiconductor materials and devices(10), Integrated Circuits and Semiconductor Failure Analysis(9), Semiconductor Quantum Structures and Devices(8)

Publications55 total

The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films
Journal of Applied Physics·2008· 39 cited
High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change | NIST
Journal of Vacuum Science and Technology·2008
High sensitivity attenuated total reflection Fourier transform infrared spectroscopy study of ultrathin ZrO2 films: A study of phase change
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2008· 4 cited
Crystallinity and Defects in Hafnium Oxide and Hafnium Silicate Films
ECS Meeting Abstracts·2006· 2 cited
A Comparison of Thickness Values for Very Thin SiO[sub 2] Films by Using Ellipsometric, Capacitance-Voltage, and HRTEM Measurements
Journal of The Electrochemical Society·2005· 7 citedOpen Access
Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
Applied Physics Letters·2005· 153 cited
High-accuracy, midinfrared (450cm−1⩽ω⩽4000cm−1) refractive index values of silicon
Journal of Applied Physics·2005· 194 cited
Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates
Journal of Electronic Materials·2005· 36 cited
Crystalline quality of bonded silicon-on-insulator characterized by spectroscopic ellipsometry and Raman spectroscopy
Applied Physics Letters·2004· 5 cited
Critical review of the current status of thickness measurements for ultrathin SiO <sub>2</sub> on Si Part V: Results of a CCQM pilot study
Surface and Interface Analysis·2004· 139 cited
Excitonic transitions in β-FeSi2 epitaxial films and single crystals
Journal of Applied Physics·2004· 12 cited
Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy
MRS Proceedings·2004· 1 cited
Ultra-thin SiO2 on Si, Part V: Results of a CCQM Pilot Study of Thickness Measurements
2003· 2 cited
Assessment of Utlra-thin SiO2 Film Thickness Meaurement Precision by Ellipsometry
2003
Spectroscopic ellipsometry of oxygen-ion-implanted silicon-on-insulator annealed at different temperatures
2003
Assessment of Ultra-Thin SiO2 Film Thickness Measurement Precision by Ellipsometry
AIP conference proceedings·2003· 7 citedOpen Access
Sensitivity of ellipsometric modeling to the 'islands' of silicon precipitates at the bottom of the buried oxide layer in annealed SIMOX
2002
AlGaAs composition measurements from in situ optical reflectance
2002· 2 cited
Optical Interband Transitions Near the Fundamental Absorption Edge of ß -FeSi_2
2002
Optical interband transitions near the fundamental absorption edge of β -FeSi_2
APS·2002
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Frequent Co-authors

P. M. Amirtharaj(12), Nhan V. Nguyen(12), James R. Ehrstein(8), George A. Candela(7), Jon Geist(4), C. R. James(4), J. F. Marchiando(4), Eric M. Vogel(4), Barbara J. Belzer(4), Martin M. Frank(3), Rainer H. Köhler(3), M. P. Seah(2), Steven J. Spencer(2), Farid Bensebaa(2), I. Vickridge(2), Hans‐Ulrich Danzebrink(2), Michael Krumrey(2), Th. Groß(2), W. Oesterle(2), E. Wendler(2)