F. Luckert

University of Strathclyde — United Kingdom

Materials Science · Physical Sciences

13h-index502citations28works0.02yr avg
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Research Topics

Quantum Dots Synthesis And Properties(16), Chalcogenide Semiconductor Thin Films(15), GaN-based semiconductor devices and materials(9), Ga2O3 and related materials(9), Semiconductor Quantum Structures and Devices(7)

Publications28 total

Anisotropy of effective masses in CuInSe2
Applied Physics Letters·2012· 15 citedOpen Access
Excitation power and temperature dependence of excitons in CuInSe2
Journal of Applied Physics·2012· 54 cited
Molecular beam epitaxy of GaN<sub>1–<i>x</i></sub>Bi<sub><i>x</i></sub> alloys with high bismuth content
physica status solidi (a)·2012· 14 cited
Optical properties of the chalcopyrite semiconductors CuInSe₂, CuInS₂ and CuGaSe₂
STAX·2012Open Access
Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy
Journal of Crystal Growth·2011· 5 citedOpen Access
Carrier localization and related photoluminescence in cubic AlGaN epilayers
Journal of Applied Physics·2011· 10 cited
Optical properties of high quality Cu2ZnSnSe4 thin films
Applied Physics Letters·2011· 95 cited
Atomic structure and optical properties of InAs submonolayer depositions in GaAs
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2011· 45 cited
GaNAs alloys over the whole composition range grown on crystalline and amorphous substrates
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2011· 8 cited
Excited States of the A and B Free Excitons in CuInSe<sub>2</sub>
Japanese Journal of Applied Physics·2011· 2 cited
Excited States of the A and B Free Excitons in CuInSe<sub>2</sub>
Japanese Journal of Applied Physics·2011· 1 cited
Wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy
Journal of Crystal Growth·2011· 9 cited
Fabrication and characterisation of Cu(In,Ga)Se2 solar cells on polyimide
Thin Solid Films·2011· 16 cited
Atomic structure of submonolayer grown InAs/GaAs quantum dots
Verhandlungen der Deutschen Physikalischen Gesellschaft·2011
Investigation of Cu(In,Ga)Se2 Thin Film Prepared by Sputtering Process
EU PVSEC·2011Open Access
Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8eV for solar energy conversion devices
Journal of Crystal Growth·2010· 15 cited
Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*
Journal of Applied Spectroscopy·2010· 6 cited
Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals
Journal of Crystal Growth·2010· 8 cited
Diamagnetic shift of the A free exciton in CuGaSe2 single crystals
Applied Physics Letters·2010· 24 citedOpen Access
Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs
Applied Physics Express·2010· 29 cited
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Frequent Co-authors

Robert Martin(22), М. V. Yakushev(11), A. V. Karotki(11), С. В. Новиков(9), P. R. Edwards(8), А. В. Мудрый(6), C. Faugeras(6), А. В. Мудрый(6), C. T. Foxon(6), A. J. Kent(6), C. R. Staddon(5), D. Bimberg(4), K. M. Yu(4), Z. Liliental‐Weber(4), W. Walukiewicz(4), Guillaume Zoppi(3), Ian Forbes(3), A. Lenz(3), H. Eisele(3), Jonas N. Becker(3)