S. Jeannot

Engineering · Physical Sciences

13h-index477citations49works0.92yr avg
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Research Topics

Semiconductor materials and devices(31), Ferroelectric and Negative Capacitance Devices(25), Advanced Memory and Neural Computing(23), Copper Interconnects and Reliability(8), Phase-change materials and chalcogenides(7)

Publications49 total

INTERMEDIATE RESISTANCE AND CAPACITANCE STATES IN Ge-RICH GeSbTe PHASE CHANGE MEMORY
SPIRE - Sciences Po Institutional REpository·2026
A Novel A-IMC Ge-GST ePCM Cell for Edge AI Applications on 28nm FD-SOI Platform
2025
Threshold Changeable Memory Based on Amorphous GeSbSeN
2025
Stoichiometry Tuning of the Crystallized Ge-Sb-Te Phase in Ge-Rich Ge-Sb-Te Thin Films By Dopant Introduction
ECS Meeting Abstracts·2025
Influence of an underlayer on the crystallization of thin Ge-rich Ge–Sb–Te films
Journal of Applied Physics·2025Open Access
Laser‐Induced Crystallization and Amorphization of Ge‐Rich GST Thin Films Monitored In Situ with Synchrotron X‐Ray Diffraction
physica status solidi (RRL) - Rapid Research Letters·2025· 2 citedOpen Access
Thermal characterization of Ge-rich GST thin films for phase change memories by Raman thermometry
Journal of Applied Physics·2024· 4 citedOpen Access
Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mapping
physica status solidi (RRL) - Rapid Research Letters·2024· 1 citedOpen Access
40nm SONOS Embedded Select in Trench Memory
2023· 1 citedOpen Access
Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
HAL (Le Centre pour la Communication Scientifique Directe)·2022
Modeling current and voltage peaks generation in complementary resistive switching devices
Solid-State Electronics·2021Open Access
Ferroelectric HfO<sub>2</sub> for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance
2019· 7 citedOpen Access
Fabrication of Planar Back End of Line Compatible HfO$_x$ Complementary Resistive Switches
IEEE Transactions on Nanotechnology·2017· 10 cited
Evaluation of ONO compatibility with high-k metal gate stacks for future embedded flash products
2017
A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions
Journal of Nanomaterials·2017· 7 citedOpen Access
Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40nm floating gate embedded-flash memory
Microelectronics Reliability·2016· 3 cited
HfO<sub>x</sub> complementary resistive switches
2016· 1 cited
Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO&lt;inf&gt;2&lt;/inf&gt; based OxRAM cells
2016· 2 cited
Planar HfOx based ReRAM using nanodamascene process
HAL (Le Centre pour la Communication Scientifique Directe)·2016
Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3
Solid-State Electronics·2016· 23 cited
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Frequent Co-authors

L. Perniola(13), Elisa Vianello(9), E. Jalaguier(9), P. Gonon(8), Alain Sylvestre(8), H. Grampeix(7), P. Candelier(7), V. Jousseaume(7), S. Bruyère(7), M. Gros‐Jean(6), Serge Ecoffey(6), P. Blaise(5), S. Blonkowski(5), S. Denorme(5), B. De Salvo(4), J. F. Nodin(4), S. Bernasconi(4), C. Cagli(4), Marina Labalette(4), A. Souifi(4)