M. F. C. Willemsen

Utrecht University — Netherlands

Engineering · Physical Sciences

12h-index668citations25works0.02yr avg
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Research Topics

Semiconductor materials and devices(14), Metal and Thin Film Mechanics(9), Ion-surface interactions and analysis(7), Semiconductor materials and interfaces(6), Electron and X-Ray Spectroscopy Techniques(4)

Publications25 total

The influence of nutrition on white matter development in preterm infants: a scoping review
Pediatric Research·2023· 5 citedOpen Access
Particle-induced X-ray emission of light elements
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1991· 4 cited
The reaction of amorphous Co–Zr layers with Si(100) and SiO2 substrates by annealing in vacuum and NH3
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1991· 4 cited
LPCVD of tungsten studied with in-situ RBS
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1990· 3 cited
Chemical effects in cold-wall LPCVD of tungsten
Applied Surface Science·1989· 19 cited
A study of Pd–Ta on Si(100) using Auger electron spectroscopy, Rutherford backscattering spectrometry, and variable energy positron annihilation
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1989· 10 cited
Thermal oxidation of silicon nitride and silicon oxynitride films
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1989· 42 cited
Oxidation of Low-Pressure-Chemical-Vapour Deposited Silicon Oxynitride Films
1989
Hydrogen incorporation in silicon (oxy)nitride thin films
Applied Physics Letters·1988· 20 citedOpen Access
Thin film reactions in the system Ti-Si-O-N
Applied Surface Science·1988· 9 cited
Oxidation behaviour of LPCVD silicon oxynitride films
Applied Surface Science·1988· 6 cited
<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> investigation of TiN formation on top of TiSi2
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1988· 54 cited
Thin-film reaction between Ti and Si3N4
Applied Physics Letters·1987· 28 cited
The effect of ion beam mixing on MoSi2 formation
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1987· 10 cited
Etch Rate Modification of Si3 N 4 Layers by Ion Bombardment and Annealing
Journal of The Electrochemical Society·1986· 2 cited
Hydrogenation during thermal nitridation of silicon dioxide
Journal of Applied Physics·1986· 40 citedOpen Access
Hydrogen profiling by proton-proton scattering
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1986· 20 cited
Hydrogen in low-pressure chemical-vapor-deposited silicon (oxy)nitride films
Journal of Applied Physics·1986· 77 cited
On the relation between deposition conditions and (mechanical) stress in plasma silicon nitride layers
Thin Solid Films·1985· 45 cited
Surface segregation and initial oxidation of titanium silicide films
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1985· 28 cited
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Frequent Co-authors

A. E. T. Kuiper(18), F.H.P.M. Habraken(7), W. M. van de Wijgert(4), W. F. van der Weg(4), A. H. Reader(3), J. C. Barbour(3), A. H. van Ommen(3), W. A. P. Claassen(2), R. H. G. Tijhaar(2), J. Mulder(2), J. B. Oude Elferink(2), A. M. L. Theunissen(2), Y. Tamminga(2), P. R. Boudewijn(2), G.J. van der Kolk(2), J. P. W. B. Duchateau(2), Miguel Sáenz de Pipaón(2), W. G. J. N. Valkenburg(1), R. Hokke(1), W.G.J.M. Valkenburg(1)