W. A. P. Claassen

NXP (Netherlands) — Netherlands

Engineering · Physical Sciences

18h-index1.4kcitations28works0.02yr avg
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Research Topics

Semiconductor materials and devices(11), Silicon and Solar Cell Technologies(10), Silicon Nanostructures and Photoluminescence(8), Thin-Film Transistor Technologies(7), Metal and Thin Film Mechanics(5)

Publications28 total

Bond pad surface quality for reliable wire bonding
Microelectronic Engineering·2011· 10 cited
Quantification issues of trace metal contaminants on silicon wafers by means of TOF-SIMS, ICP-MS, and TXRF
Applied Surface Science·2004· 21 cited
Plasma-Enhanced CVD of Silicon-Related Compounds
1990
Plasma-enhanced deposition of amorphous silicon at temperatures between 300 and 500 °C
Thin Solid Films·1989· 9 cited
Ion bombardment-induced mechanical stress in plasma-enhanced deposited silicon nitride and silicon oxynitride films
Plasma Chemistry and Plasma Processing·1987· 48 cited
Characterization of Silicon‐Oxynitride Films Deposited by Plasma‐Enhanced CVD
Journal of The Electrochemical Society·1986· 65 cited
プラズマ増強蒸着したシリコン-(オキシ)窒化物層の特性化 UV及びIR透過
1986
On the relation between deposition conditions and (mechanical) stress in plasma silicon nitride layers
Thin Solid Films·1985· 45 cited
Influence of Deposition Temperature, Gas Pressure, Gas Phase Composition, and RF Frequency on Composition and Mechanical Stress of Plasma Silicon Nitride Layers
Journal of The Electrochemical Society·1985· 190 cited
Characterization of Plasma Silicon Nitride Layers
Journal of The Electrochemical Society·1983· 152 cited
Influence of Carbon Addition on the Electrical and Structural Properties of Phosphorus and Boron Doped Silicon Layers
Journal of The Electrochemical Society·1983· 3 cited
Carbon in polycrystalline silicon, influence on resistivity and grain size
Applied Physics Letters·1982· 6 cited
The deposition of silicon from silane in a low-pressure hot-wall system
Journal of Crystal Growth·1982· 75 cited
Rate-determining reactions and surface species in CVD silicon
Journal of Crystal Growth·1982· 25 cited
ChemInform Abstract: THE NUCLEATION OF CVD SILICON ON SILICON DIOXIDE AND SILICON NITRIDE SUBSTRATES. III. THE MONOSILANE‐HYDROGEN CHLORIDE‐HYDROGEN SYSTEM AT LOW TEMPERATURES
Chemischer Informationsdienst·1981
The Nucleation of CVD Silicon on SiO2 and Si3 N 4 Substrates: III . The System at Low Temperatures
Journal of The Electrochemical Society·1981· 50 cited
Rate-determining reactions and surface species in CVD of silicon III. The SiH4-H2-N2 system
Journal of Crystal Growth·1981· 53 cited
ChemInform Abstract: THE NUCLEATION OF CVD SILICON ON SILICON DIOXIDE AND SILICON NITRIDE (SI3N4) SUBSTRATES. II. THE DICHLOROSILANE‐HYDROGEN‐NITROGEN SYSTEM
Chemischer Informationsdienst·1980
Rate-determining reactions and surface species in CVD of silicon
Journal of Crystal Growth·1980· 61 cited
ChemInform Abstract: KINETIC STUDIES ON THE NUCLEATION AND GROWTH OF SILICON VIA CHEMICAL VAPOR DEPOSITION
Chemischer Informationsdienst·1980· 2 cited
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Frequent Co-authors

J. Bloem(15), W. G. J. N. Valkenburg(4), Wim H. de Jeu(3), M. F. C. Willemsen(2), W. M. van de Wijgert(2), F.H.P.M. Habraken(2), A. M. J. Spruijt(1), Y. Tamminga(1), C.H.J. Van Den Brekel(1), H. A. J. Th. v. d. Pol(1), A. H. Goemans(1), A. E. T. Kuiper(1), W.G.J.M. Valkenburg(1), P. Rostam-Khani(1), M. Hopstaken(1), Peter J. M. G. Vullings(1), G. Noij(1), Orla O'Halloran(1), D. Martin Knotter(1), Ingrid Rink(1)