Chih-Yang Lin

National Cheng Kung University — Taiwan

Engineering · Physical Sciences

15h-index850citations32works0.52yr avg
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Research Topics

Advanced Memory and Neural Computing(23), Ferroelectric and Negative Capacitance Devices(15), Electronic and Structural Properties of Oxides(9), Magnetic and transport properties of perovskites and related materials(7), Transition Metal Oxide Nanomaterials(7)

Publications32 total

Contrast-Free Super-Resolution microvascular imaging through high frequency ultrasound imaging
Ultrasonics·2025· 1 cited
Nonlinear Bifunctional Memristor for Reprogrammable Programmable Read-Only Memory (PROM) Applications
ECS Meeting Abstracts·2024
Investigating Selectorless Property within Niobium Devices for Storage Applications
ACS Applied Materials & Interfaces·2022· 18 cited
A high-speed MIM resistive memory cell with an inherent vanadium selector
Applied Materials Today·2020· 21 cited
High-Density Memristor-CMOS Ternary Logic Family
IEEE Transactions on Circuits and Systems I Regular Papers·2020· 95 cited
Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium Electrode
IEEE Transactions on Electron Devices·2020· 10 cited
High-Density Memristor-CMOS Ternary Logic Family
2020· 2 citedOpen Access
High-Density Memristor-CMOS Ternary Logic Family
2020Open Access
Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing
Advanced Intelligent Systems·2020· 29 citedOpen Access
Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing
Advanced Intelligent Systems·2020· 142 citedOpen Access
High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator
IEEE Electron Device Letters·2020· 49 cited
LiSiO<sub>X</sub>-Based Analog Memristive Synapse for Neuromorphic Computing
IEEE Electron Device Letters·2019· 66 cited
Corrigendum: Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application (2018 <i>J. Phys. D: Appl. Phys</i>. <b>51</b> 055108)
Journal of Physics D Applied Physics·2018· 3 cited
Selector-Less Graphite Memristor: Intrinsic Nonlinear Behavior with Gap Design Method for Array Applications
ECS Meeting Abstracts·2018
Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory
InTech eBooks·2018· 4 citedOpen Access
Effects of Ambient Sensing on SiO<sub>x</sub>-Based Resistive Switching and Resilience Modulation by Stacking Engineering
ECS Journal of Solid State Science and Technology·2018· 8 citedOpen Access
Beyond SiO<sub>x</sub>: an active electronics resurgence and biomimetic reactive oxygen species production and regulation from mitochondria
Journal of Materials Chemistry C·2018· 11 cited
Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application
Journal of Physics D Applied Physics·2017· 22 cited
A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector
2017· 1 cited
Dynamic conductance characteristics in HfO<sub>x</sub>-based resistive random access memory
RSC Advances·2017· 39 citedOpen Access
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Frequent Co-authors

Ting‐Chang Chang(18), Ying‐Chen Chen(13), Yao‐Feng Chang(12), Jack C. Lee(11), Burt Fowler(9), Jason K. Eshraghian(7), Simon M. Sze(7), Hui‐Chun Huang(7), Po‐Hsun Chen(6), Xiaohan Wu(6), Chih-Hung Pan(5), Hua‐Shu Hsu(5), Hsiung Chou(5), Sungjun Kim(5), Kuan‐Chang Chang(4), Tsung‐Ming Tsai(4), Min-Chen Chen(4), Yi‐Ting Tseng(4), Meiqi Guo(4), Xiaoyuan Wang(3)