Hui‐Chun Huang

Chia-Yi Christian Hospital — Taiwan

Engineering · Physical Sciences

18h-index1.3kcitations54works0.02yr avg
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Research Topics

Advanced Memory and Neural Computing(23), Ferroelectric and Negative Capacitance Devices(14), Transition Metal Oxide Nanomaterials(11), Semiconductor materials and devices(8), Electronic and Structural Properties of Oxides(8)

Publications54 total

Working Experiences of Care Aides in Long-Term Care Institutions Following the Relaxation of COVID-19 Regulations in Taiwan: A Qualitative Study
Gerontology and Geriatric Medicine·2024Open Access
Substrate-Induced Anisotropic Growth of CuAlO<sub>2</sub> Platelets in a Liquid–Solid Reaction
ACS Omega·2023· 2 citedOpen Access
Study of Anisotropic Strain in Self-Assembled GaN Microdisks Grown by Molecular Beam Epitaxy
2023
An Efficient Data Protection Scheme Based on Hierarchical ID-Based Encryption for MQTT
ACM Transactions on Sensor Networks·2022· 17 cited
Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al<sub>2</sub>O<sub>3</sub> Passivation in Moist Environment
IEEE Transactions on Electron Devices·2022· 8 cited
Degradation Mechanism Differences between Tin- and Tanelectrode Hzo-Based Ferams Analyzed by Current
SSRN Electronic Journal·2022Open Access
Performance Improvement by Modifying Deposition Temperature in HfZrO<sub> <i>x</i> </sub> Ferroelectric Memory
IEEE Transactions on Electron Devices·2021· 11 cited
Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments
IEEE Transactions on Electron Devices·2021· 8 cited
A high-speed MIM resistive memory cell with an inherent vanadium selector
Applied Materials Today·2020· 21 cited
Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices
Small·2020· 72 citedOpen Access
Investigation on the current conduction mechanism of HfZrO <sub>x</sub> ferroelectric memory
Journal of Physics D Applied Physics·2020· 20 cited
Impact of Gate Size on Abnormal Current Rise Under an Electric Field in Organic Thin-Film Transistors
IEEE Transactions on Electron Devices·2020· 1 cited
Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory
Journal of Alloys and Compounds·2020· 28 cited
Investigation of the Capacitance–Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment
ACS Applied Materials & Interfaces·2019· 40 cited
Selectorless resistive switching memory: Non-uniform dielectric architecture and seasoning effect for low power array applications
AIP Advances·2019· 22 citedOpen Access
Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy
Crystals·2019· 5 citedOpen Access
Pedestaled subwavelength grating metamaterial waveguide for sensitivity enhancement (Conference Presentation)
2019
Enhancement of Surface Chemical and Physical Properties of Germanium–Sulfur Thin Film Using a Water‐Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique
Advanced Materials Interfaces·2018· 12 cited
The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector
IEEE Transactions on Electron Devices·2018· 37 cited
Formation of PtSn4 and PtSn in the initial reaction between Pt and molten Sn
Thin Solid Films·2018· 1 cited
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Frequent Co-authors

Ting‐Chang Chang(26), Tsung‐Ming Tsai(12), Simon M. Sze(12), Po‐Hsun Chen(10), Dershin Gan(10), Kuan‐Chang Chang(8), Min-Chen Chen(8), Yi‐Jehng Kuan(7), Ying‐Chen Chen(7), Yao‐Feng Chang(7), Chih-Yang Lin(7), Steven B. Charnley(6), Jack C. Lee(6), Wen‐Chung Chen(5), Yung‐Fang Tan(5), Yong‐Ci Zhang(5), Mitch M. C. Chou(5), Zbigniew Kisiel(4), Ikai Lo(4), Yi‐Ting Tseng(4)