D.B.M. Klaassen

NXP (Netherlands) — Netherlands

Engineering · Physical Sciences

30h-index6.0kcitations126works0.02yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(74), Semiconductor materials and devices(60), Radio Frequency Integrated Circuit Design(39), Silicon Carbide Semiconductor Technologies(18), Luminescence Properties of Advanced Materials(14)

Publications126 total

RF technology optimization by a fast method for linearity determination
2015
An SiGe heterojunction bipolar transistor with very high open-base breakdown voltage
2014· 2 cited
Threshold behavior of the drift region: The missing piece in LDMOS modeling
2013· 10 cited
RF-Noise Modeling in Advanced CMOS Technologies
IEEE Transactions on Electron Devices·2013· 54 cited
Investigation of power and linearity performance for low- and high-voltage SiGe HBTs
2013· 1 cited
Temperature and geometry dependence of the electrothermal instability of bipolar transistors
2012· 5 cited
Fast noise prediction for process optimization using only standard DC and S-parameter measurements
2012· 3 cited
SiGe:C profile optimization for low noise performance
2011· 11 cited
Virtual technology for RF process and device development
2011· 4 cited
Extended high voltage HBTs in a high-performance BiCMOS process
2011· 3 cited
Wafer-specific centering of compact transistor model parameters for advanced technologies and models
2011
FinFET compact modelling for analogue and RF applications
2010· 14 cited
Layout and spacer optimization for high-frequency low-noise performance in HBT's
2010· 5 cited
Experimental Demonstration and Modeling of Excess RF Noise in Sub-100-nm CMOS Technologies
IEEE Electron Device Letters·2010· 17 cited
RF benchmark tests for compact MOS models
2010· 4 cited
The JUNCAP2 Model for Junction Diodes
2010· 7 cited
Surface-Potential-Based Compact Model of Bulk MOSFET
2010· 22 cited
Experimental assessment of self-heating in SOI FinFETs
2009· 93 cited
Impact of interface states on MOS transistor mismatch
2009· 21 cited
The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications
IEEE Journal of Solid-State Circuits·2009· 38 cited
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Frequent Co-authors

A.J. Scholten(26), R. van Langevelde(20), G.D.J. Smit(14), L.F. Tiemeijer(13), G. Gildenblat(10), Weimin Wu(9), R.J. Havens(6), P.H. Woerlee(4), Ralf Pijper(4), J.C.J. Paasschens(4), Colin C. McAndrew(4), Josef Watts(4), Amit Jha(3), M.J. Knitel(3), D.M. de Leeuw(3), J. J. ter Meulen(3), A. Dymanus(3), X. Li(3), G.A.M. Hurkx(2), M.P.G. Knuvers(2)