A.J. Scholten

NXP (Netherlands) — Netherlands

Engineering · Physical Sciences

28h-index3.3kcitations155works1.62yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(106), Semiconductor materials and devices(76), Radio Frequency Integrated Circuit Design(61), Silicon Carbide Semiconductor Technologies(29), Electrostatic Discharge in Electronics(28)

Publications155 total

Layout effects on the thermal metrics of multichannel FinFETs
Solid-State Electronics·2025Open Access
Performance and Compact Modeling of Transistors for Wide Temperature Range Electronics
2025
Mextram Nonlinear Self-Heating Model Parameter Extraction Using Only $I_{\mathrm{C}}- V_{\text{CE}}$
2025
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs
IEEE Transactions on Electron Devices·2025
Distinct Signatures of Self-Heating and Trap Dynamics on the AC Y-Parameters of Advanced n-MOSFETs
2025· 1 citedOpen Access
Characterization of Self-Heating Using the AC Conductance Method (Invited Paper)
2025· 1 cited
Benchmarks for SPICE Modeling and Parameter Extraction Based on AI/ML
IEEE Transactions on Electron Devices·2025· 8 cited
Layout Effects on the Thermal Metrics of Multichannel Finfets
SSRN Electronic Journal·2025Open Access
Improved Nonlinear Self-Heating Compact Modeling in SiGe HBTs Using Mextram
ECS Meeting Abstracts·2024
Compact Modeling of Base Current High Injection Effect in SiGe HBTs
ECS Meeting Abstracts·2024
Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes
IEEE Transactions on Electron Devices·2024· 6 citedOpen Access
Improved Nonlinear Self-Heating Compact Modeling in SiGe HBTs Using Mextram
ECS Transactions·2024· 1 cited
On the Output Conductance Dispersion due to Traps and Self-Heating in Large Bulk, FDSOI and FinFET nMOS Devices
2024· 1 citedOpen Access
Assessment of the Transient Self-Heating Effect and its Impact on the Performance of Watt-Level RF Power Amplifier in a FinFET Technology
2024· 4 citedOpen Access
Random Telegraph Noise in Analog CMOS Circuits
IEEE Transactions on Circuits and Systems I Regular Papers·2023· 10 cited
Compact Modeling of Forward Operation Band-to-Band andTrap-Assisted Tunneling Currents in SiGe HBTs
ECS Meeting Abstracts·2022
Avalanche Modeling in Mextram 505 and Implications on Circuit Simulations
ECS Meeting Abstracts·2022
Compact Modeling of Forward Operation Band-to-Band andTrap-Assisted Tunneling Currents in SiGe HBTs
ECS Transactions·2022
Avalanche Modeling in Mextram 505 and Implications on Circuit Simulations
ECS Transactions·2022· 1 cited
Improved Compact Modeling of SiGe HBT Linearity With MEXTRAM
IEEE Transactions on Electron Devices·2021· 3 cited
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Frequent Co-authors

D.B.M. Klaassen(30), R. van Langevelde(25), G.D.J. Smit(19), L.F. Tiemeijer(18), G. Gildenblat(12), Weimin Wu(11), R.J. Havens(10), Colin C. McAndrew(5), Ralf Pijper(5), A. Mercha(5), A.T.A. Zegers-van Duijnhoven(4), P.H. Woerlee(4), Hans Tuinhout(4), J.C.J. Paasschens(4), R. de Kort(4), Josef Watts(4), Xiaoyue Li(3), Hai Wang(3), Amit Jha(3), M.J. Knitel(3)