L. Neiberg

Engineering · Physical Sciences

3h-index890citations3works0.02yr avg
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Research Topics

Semiconductor materials and devices(3), Advancements in Semiconductor Devices and Circuit Design(3), Ferroelectric and Negative Capacitance Devices(3)

Publications3 total

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size
2014· 522 cited
High performance 32nm logic technology featuring 2<sup>nd</sup> generation high-k + metal gate transistors
2009· 184 cited
A 32nm logic technology featuring 2<sup>nd</sup>-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm<sup>2</sup> SRAM cell size in a 291Mb array
2008· 184 cited

Frequent Co-authors

S. Natarajan(3), T. Ghani(3), R. Heussner(3), R. James(3), C. Kenyon(3), P. Packan(3), C. Parker(3), Leonard C. Pipes(3), S. Sivakumar(3), K. Tone(3), T. Troeger(3), Sheikh A. Akbar(2), M. Bost(2), V. Chikarmane(2), Won Seok Han(2), Ik Kyeong Jin(2), Miao Liu(2), Yuxin Luo(2), C. Pelto(2), B. Sell(2)