D. Klaus

Krankenhäuser Landkreis Freudenstadt — Germany

Engineering · Physical Sciences

17h-index1.4kcitations47works0.02yr avg
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Research Topics

Semiconductor materials and devices(22), Advancements in Semiconductor Devices and Circuit Design(16), Integrated Circuits and Semiconductor Failure Analysis(9), Quantum Information and Cryptography(8), Advancements in Photolithography Techniques(8)

Publications47 total

Reducing process time of PV module lamination by using double-side heating system
EPJ Photovoltaics·2025Open Access
Hamiltonian Engineering with Multicolor Drives for Fast Entangling Gates and Quantum Crosstalk Cancellation
Physical Review Letters·2022· 76 cited
Suppressed Crosstalk between Two-Junction Superconducting Qubits with Mode-Selective Exchange Coupling
Physical Review Applied·2021Open Access
Demonstration of a High-Fidelity cnot Gate for Fixed-Frequency Transmons with Engineered <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Z</mml:mi><mml:mi>Z</mml:mi></mml:mrow></mml:math> Suppression
Physical Review Letters·2021· 151 citedOpen Access
Spectator Errors in Tunable Coupling Architectures
arXiv (Cornell University)·2021· 7 citedOpen Access
Tunable Coupling Architecture for Fixed-Frequency Transmon Superconducting Qubits
Physical Review Letters·2021· 157 citedOpen Access
Quantum crosstalk cancellation for fast entangling gates and improved multi-qubit performance
arXiv (Cornell University)·2021· 14 citedOpen Access
Tunable Coupling Architecture for Fixed-frequency Transmons
arXiv (Cornell University)·2021· 4 citedOpen Access
Demonstration of a High-Fidelity CNOT for Fixed-Frequency Transmons with Engineered ZZ Suppression
arXiv (Cornell University)·2020· 7 citedOpen Access
Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm<sup>2</sup>
2017· 17 cited
Resistivity of copper interconnects beyond the 7 nm node
2015· 30 cited
Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2015· 3 cited
Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
2014· 2 cited
Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-<i>b</i>-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication
ACS Nano·2014· 154 cited
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
2013· 96 cited
Dot-matrix marks for dynamic overlay measurements in electron beam lithography
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2013
Pattern transfer of directed self-assembly patterns for CMOS device applications
Journal of Micro/Nanolithography MEMS and MOEMS·2013· 8 cited
Patterning of CMOS device structures for 40-80nm pitches and beyond
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2012· 10 cited
Pattern collapse mitigation strategies for EUV lithography
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2012· 33 cited
A 0.021 µm 2 trigate SRAM cell with aggressively scaled gate and contact pitch
Symposium on VLSI Technology·2011· 8 cited
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Frequent Co-authors

Michael Guillorn(17), J. J. Bucchignano(11), Eric Joseph(9), Santino D. Carnevale(8), George Keefe(8), Oliver Dial(8), C. Lavoie(8), Hsinyu Tsai(7), Hiroyuki Miyazoe(7), Sebastian Engelmann(7), Markus Brink(7), A. Pyzyna(7), Wilfried Haensch(7), James J. Bucchignano(6), Josephine Chang(6), Robert L. Bruce(6), Lynne Gignac(6), J. Newbury(6), Shalom J. Wind(6), Y. T. Lii(6)