Hiroyuki Miyazoe

IBM (United States) — United States

Engineering · Physical Sciences

21h-index1.3kcitations75works5.32yr avg
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Research Topics

Semiconductor materials and devices(34), Advanced Memory and Neural Computing(13), Diamond and Carbon-based Materials Research(11), Plasma Diagnostics and Applications(11), Ferroelectric and Negative Capacitance Devices(10)

Publications75 total

Transfer Learning on Edge Using 14nm CMOS-compatible ReRAM Array and Analog In-memory Training Algorithm
2025
Low RESET Current Mushroom‐Cell Phase‐Change Memory Using Fiber‐Textured Homostructure GeSbTe on Highly Oriented Seed Layer
physica status solidi (RRL) - Rapid Research Letters·2024· 12 cited
Demonstration of transfer learning using 14 nm technology analog ReRAM array
Frontiers in Electronics·2024· 4 citedOpen Access
Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
2022 International Electron Devices Meeting (IEDM)·2022· 22 cited
Neural network learning using non-ideal resistive memory devices
Frontiers in Nanotechnology·2022· 10 citedOpen Access
Study of surface interactions for encapsulation of phase change memory materials
2022
Plasma processing for advanced microelectronics beyond CMOS
Journal of Applied Physics·2021· 31 citedOpen Access
Hardware Algorithm Co-optimization on Resistive RAM Cross-bar Array for Scalable Analog Compute Technology for AI application
2021
Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning
IEEE Electron Device Letters·2021· 7 cited
Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2021· 22 citedOpen Access
Effect of surface temperature on GeSbTe damage formation during plasma processing
2021· 2 cited
Plasma Ion Doping for Semiconductor Applications
Bulletin of the American Physical Society·2020
Utilizing photosensitive polymers to evaluate UV radiation exposures in different plasma chamber configurations
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2020· 6 cited
Hydrocarbon layer formation and removal studies on SiN films etched in halogen/hydrofluorocarbon plasmas
2020· 1 cited
Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator
2019· 92 cited
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM
2019· 9 cited
Zero-shifting Technique for Deep Neural Network Training on Resistive Cross-point Arrays
arXiv (Cornell University)·2019· 12 citedOpen Access
Solution for PCM and OTS Intermixing on Cross-Point Phase Change Memory
2019· 8 cited
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
2018· 18 cited
A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory
IEEE Transactions on Electron Devices·2018· 52 cited
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Frequent Co-authors

Sebastian Engelmann(18), Eric Joseph(15), Robert L. Bruce(14), Kazuo Terashima(12), Hsinyu Tsai(11), Michael Guillorn(10), Takashi Ando(9), Vijay Narayanan(8), Sven Stauss(7), Lynne Gignac(6), Damon B. Farmer(5), D. Klaus(5), Tayfun Gokmen(5), P. M. Solomon(5), Fabio Carta(5), Nathan Marchack(5), Joy Cheng(4), John Rozen(4), A. Ray(4), M. BrightSky(4)