P.C. Chang

ITRI International — United States

Physics and Astronomy · Physical Sciences

9h-index303citations33works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(22), GaN-based semiconductor devices and materials(19), Radio Frequency Integrated Circuit Design(19), Advancements in Semiconductor Devices and Circuit Design(8), Semiconductor materials and devices(6)

Publications33 total

(Invited) Technologies and Challenges of Fine Pitch Backside Via-Last TSV Process Integration for 3DIC Applications
ECS Transactions·2013· 5 citedOpen Access
AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor
University of North Texas Digital Library (University of North Texas)·2009Open Access
Advanced InP HBT Technology at Northrop Grumman Aerospace Systems
2009· 7 cited
172 GHz divide-by-two circuit using a 0.25-µm InP HBT technology
2009· 9 cited
Advanced HBT microelectronics at Northrop Grumman Space Technology
2008· 3 cited
A 154-GHz Static Divider in 0.25 μm InP DHBT Technology
2006· 6 cited
Sub-Micrometer InP/InGaAs Heterojunction Bipolar Transistors with fT = 400 GHz and fmax < 500 GHz
2006· 9 cited
BCB Deep Via Etching Process on ICP Etching System
ECS Meeting Abstracts·2006Open Access
Sub-Micron INP Double Heterojunction Bipolar Transistor with Greater than 400GHZ fT and fMAX
ECS Meeting Abstracts·2006
Dry Etching of Sub-Micron Emitter in InP Heterojunction Double Bipolar Transistor Using Inductively Coupled Plasma
ECS Meeting Abstracts·2006
Vertical scaling of planarized InP/InGaAs heterojunction bipolar transistors with f/sub T/< 350 GHz and f/sub max/ < 500 GHz
2005· 9 cited
Planarized InP/InGaAs heterojunction bipolar transistors wlth f/sub MAX/ < 500 GHz
2004· 2 cited
<font>InGaAsN</font>-BASED HBTs
WORLD SCIENTIFIC eBooks·2003
NpN InGaAsN-based heterojunction bipolar transistors with f/sub max/ = 60 GHz
2002
High-speed performance of NpN InGaAsN-based double heterojunction bipolar transistors
2002· 2 cited
AlGaAs/InGaAlP tunnel junctions for multi-junction solar cells
2002· 4 cited
RF characteristics of GaAs/InGaAsN/GaAs P-n-P double heterojunction bipolar transistors
2002· 2 cited
First demonstration of the AlGaAs-InGaAsN-GaAs P-n-P double heterojunction bipolar transistor
2002
Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors
Solid-State Electronics·2002· 2 cited
High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage
Solid-State Electronics·2002· 6 cited
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Frequent Co-authors

Albert G. Baca(20), C. Monier(15), H.Q. Hou(11), F. Ren(8), S. J. Pearton(8), A.K. Oki(8), A. Gutierrez-Aitken(8), D. Sawdai(7), J. R. LaRoche(6), B. Oyama(6), D. Scott(5), B. Chan(5), E. Armour(4), Paul Sharps(4), X.M. Xie(3), A. Cavus(3), E. Kaneshiro(3), Ken Sato(3), Peter Nam(3), J. Wang(3)